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APTGT150H60TG Datasheet(PDF) 4 Page - Microsemi Corporation |
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APTGT150H60TG Datasheet(HTML) 4 Page - Microsemi Corporation |
4 / 5 page APTGT150H60TG www.microsemi.com 4 - 5 Typical Performance Curve Output Characteristics (VGE=15V) TJ=25°C TJ=25°C TJ=125°C TJ=150°C 0 50 100 150 200 250 300 00.511.522.5 3 VCE (V) Output Characteristics VGE=15V VGE=13V VGE=19V VGE=9V 0 50 100 150 200 250 300 00.511.522.533.5 VCE (V) TJ = 150°C Transfert Characteristics TJ=25°C TJ=25°C TJ=125°C TJ=150°C 0 50 100 150 200 250 300 5 678 9 10 11 12 VGE (V) Energy losses vs Collector Current Eon Eoff Er 0 2 4 6 8 10 0 50 100 150 200 250 300 IC (A) VCE = 300V VGE = 15V RG = 3.3Ω TJ = 150°C Eon Eon Eoff Eoff Er 0 2 4 6 8 10 12 0 5 10 15 20 25 Gate Resistance (ohms) VCE = 300V VGE =15V IC= 150A TJ = 150°C Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 0 50 100 150 200 250 300 350 0 100 200 300 400 500 600 700 VCE (V) VGE=15V TJ=150°C RG=3.3Ω maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds IGBT |
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