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APTGT400DA120G Datasheet(PDF) 4 Page - Microsemi Corporation |
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APTGT400DA120G Datasheet(HTML) 4 Page - Microsemi Corporation |
4 / 5 page APTGT400DA120G www.microsemi.com 4 - 5 Typical Performance Curve Output Characteristics (VGE=15V) TJ=25°C TJ=125°C 0 100 200 300 400 500 600 700 800 012 34 VCE (V) Output Characteristics VGE=15V VGE=13V VGE=17V VGE=9V 0 100 200 300 400 500 600 700 800 01234 VCE (V) TJ = 125°C Transfert Characteristics TJ=25°C TJ=125°C TJ=125°C 0 100 200 300 400 500 600 700 800 56789 10 11 12 VGE (V) Energy losses vs Collector Current Eon Eon Eoff Er 0 20 40 60 80 100 0 100 200 300 400 500 600 700 800 IC (A) VCE = 600V VGE = 15V RG = 1.2Ω TJ = 125°C Eon Eoff Er 0 10 20 30 40 50 60 70 80 90 100 0246 8 10 Gate Resistance (ohms) VCE = 600V VGE =15V IC = 400A TJ = 125°C Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 0 100 200 300 400 500 600 700 800 900 0 300 600 900 1200 1500 VCE (V) VGE=15V TJ=125°C RG=1.2 Ω maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse 0 0.02 0.04 0.06 0.08 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) IGBT |
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