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APTGT450DU60G Datasheet(PDF) 5 Page - Microsemi Corporation |
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APTGT450DU60G Datasheet(HTML) 5 Page - Microsemi Corporation |
5 / 5 page APTGT450DU60G www.microsemi.com 5 - 5 Forward Characteristic of diode TJ=25°C TJ=125°C TJ=150°C 0 200 400 600 800 1000 0 0.4 0.8 1.2 1.6 2 VF (V) Hard switching ZCS ZVS 0 20 40 60 80 100 120 0 200 400 600 800 IC (A) VCE=300V D=50% RG=1Ω TJ=150°C Tc=85°C Operating Frequency vs Collector Current maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds Diode Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. |
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