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APTGT450SK60G Datasheet(PDF) 4 Page - Microsemi Corporation |
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APTGT450SK60G Datasheet(HTML) 4 Page - Microsemi Corporation |
4 / 5 page APTGT450SK60G www.microsemi.com 4 - 5 Typical Performance Curve Output Characteristics (VGE=15V) TJ=25°C TJ=25°C TJ=125°C TJ=150°C 0 200 400 600 800 1000 0 0.5 1 1.5 2 2.5 VCE (V) Output Characteristics VGE=15V VGE=13V VGE=19V VGE=9V 0 200 400 600 800 1000 00.5 1 1.522.533.5 VCE (V) TJ = 150°C Transfert Characteristics TJ=25°C TJ=25°C TJ=125°C TJ=150°C 0 200 400 600 800 1000 56 78 9 10 11 VGE (V) Energy losses vs Collector Current Eon Eoff Er 0 5 10 15 20 25 30 35 0 200 400 600 800 1000 IC (A) VCE = 300V VGE = 15V RG = 1Ω TJ = 150°C Eon Eon Eoff Er 0 10 20 30 02468 Gate Resistance (ohms) VCE = 300V VGE =15V IC = 450A TJ = 150°C Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 0 200 400 600 800 1000 0 100 200 300 400 500 600 700 VCE (V) VGE=15V TJ=150°C RG=1Ω maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse 0 0.02 0.04 0.06 0.08 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds IGBT |
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