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APTM10DAM05TG Datasheet(PDF) 1 Page - Microsemi Corporation

Part # APTM10DAM05TG
Description  Boost chopper MOSFET Power Module
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTM10DAM05TG Datasheet(HTML) 1 Page - Microsemi Corporation

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APTM10DAM05TG
www.microsemi.com
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CR1
VBUS
NTC2
0/VBUS
VBUS SENSE
G2
S2
NTC1
Q2
OUT
VBUS
OUT
OUT
NTC2
NTC1
0/VBUS
S2
S2
G2
G2
VBUS
SENSE
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
100
V
Tc = 25°C
278
ID
Continuous Drain Current
Tc = 80°C
207
IDM
Pulsed Drain current
1100
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
5
m
PD
Maximum Power Dissipation
Tc = 25°C
780
W
IAR
Avalanche current (repetitive and non repetitive)
100
A
EAR
Repetitive Avalanche Energy
50
EAS
Single Pulse Avalanche Energy
3000
mJ
VDSS = 100V
RDSon = 4.5mΩ typ @ Tj = 25°C
ID = 278A @ Tc = 25°C
Application
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Features
Power MOS V® MOSFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Avalanche energy rated
-
Very rugged
Kelvin source for easy drive
Very low stray inductance
-
Symmetrical design
-
Lead frames for power connections
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
RoHS Compliant
Boost chopper
MOSFET Power Module


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