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APTM10TAM09FPG Datasheet(PDF) 1 Page - Microsemi Corporation |
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APTM10TAM09FPG Datasheet(HTML) 1 Page - Microsemi Corporation |
1 / 6 page APTM10TAM09FPG www.microsemi.com 1 – 6 W VBUS1 VBUS2 VBUS3 0/VBUS3 V G5 G6 S5 S6 0/VBUS1 S2 G2 G1 S1 0/VBUS2 U S3 S4 G3 G4 S5 G5 G6 S6 VBUS 2 0/VBUS 3 VBUS 3 0/VBUS 2 W V G4 S4 G3 S3 VBUS 1 0/VBUS 1 S1 G1 S2 G2 U Absolute maximum ratings These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com Symbol Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage 100 V Tc = 25°C 139 ID Continuous Drain Current Tc = 80°C 100 IDM Pulsed Drain current 430 A VGS Gate - Source Voltage ±30 V RDSon Drain - Source ON Resistance 10 m Ω PD Maximum Power Dissipation Tc = 25°C 390 W IAR Avalanche current (repetitive and non repetitive) 100 A EAR Repetitive Avalanche Energy 50 EAS Single Pulse Avalanche Energy 3000 mJ VDSS = 100V RDSon = 09mΩ typ @ Tj = 25°C ID = 139A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Power MOS V® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic diode - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Very low (12mm) profile • Each leg can be easily paralleled to achieve a phase leg of three times the current capability • Module can be configured as a three phase bridge • Module can be configured as a boost followed by a full bridge • RoHS Compliant Triple phase leg MOSFET Power Module |
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