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APTM20SKM10TG Datasheet(PDF) 2 Page - Microsemi Corporation |
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APTM20SKM10TG Datasheet(HTML) 2 Page - Microsemi Corporation |
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2 / 6 page  APTM20SKM10TG www.microsemi.com 2 – 6 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VGS = 0V,VDS = 200V Tj = 25°C 200 IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 160V Tj = 125°C 1000 µA RDS(on) Drain – Source on Resistance VGS = 10V, ID = 87.5A 10 12 m Ω VGS(th) Gate Threshold Voltage VGS = VDS, ID = 5mA 3 5 V IGSS Gate – Source Leakage Current VGS = ±30 V, VDS = 0V ±150 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Ciss Input Capacitance 13.7 Coss Output Capacitance 4.36 Crss Reverse Transfer Capacitance VGS = 0V VDS = 25V f = 1MHz 0.19 nF Qg Total gate Charge 224 Qgs Gate – Source Charge 86 Qgd Gate – Drain Charge VGS = 10V VBus = 100V ID = 150A 94 nC Td(on) Turn-on Delay Time 28 Tr Rise Time 56 Td(off) Turn-off Delay Time 81 Tf Fall Time Inductive switching @ 125°C VGS = 15V VBus = 133V ID = 150A RG = 2.5Ω 99 ns Eon Turn-on Switching Energy 926 Eoff Turn-off Switching Energy Inductive switching @ 25°C VGS = 15V, VBus = 133V ID = 150A, RG = 2.5Ω 910 µJ Eon Turn-on Switching Energy 1216 Eoff Turn-off Switching Energy Inductive switching @ 125°C VGS = 15V, VBus = 133V ID = 150A, RG = 2.5Ω 1062 µJ Chopper diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VRRM Maximum Peak Repetitive Reverse Voltage 200 V Tj = 25°C 250 IRM Maximum Reverse Leakage Current VR=200V Tj = 125°C 600 µA IF DC Forward Current Tc = 85°C 120 A IF = 120A 1.1 1.15 IF = 240A 1.4 VF Diode Forward Voltage IF = 120A Tj = 125°C 0.9 V Tj = 25°C 31 trr Reverse Recovery Time Tj = 125°C 60 ns Tj = 25°C 120 Qrr Reverse Recovery Charge IF = 120A VR = 133V di/dt = 400A/µs Tj = 125°C 500 nC |
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