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TDA3676 Datasheet(HTML) 5 Page - NXP Semiconductors

Part No. TDA3676
Description  Low dropout voltage/quiescent current 10 V voltage regulator with enable
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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TDA3676 Datasheet(HTML) 5 Page - NXP Semiconductors

 
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2000 Feb 01
5
Philips Semiconductors
Preliminary specification
Low dropout voltage/quiescent current
10 V voltage regulator with enable
TDA3676
CHARACTERISTICS
VP = 14.4 V; Tamb =25 °C; VI(EN) = 5 V; measured in test circuit of Fig.3; unless otherwise specified.
Notes
1. The regulator output will follow VP if VP <VREG +VREG(drop).
2. Limiting values as applicable for device type:
a) TDA3676T: VP ≤ 33 V, −40 °C ≤ Tamb ≤ +85 °C.
b) TDA3676AT: VP ≤ 45 V, −40 °C ≤ Tamb ≤ +125 °C.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supply voltage: pin VP
VP
supply voltage
regulator operating; note 1
TDA3676T
3
14.4
33
V
TDA3676AT
3
14.4
45
V
Iq
quiescent current
VP = 14.4 V; IREG = 0 mA;
VI(EN) =0V
415
µA
VP = 14.4 V; IREG = 0 mA;
VI(EN) =5V
15
30
µA
11.5 V
≤ V
P ≤ 22 V; IREG =10mA
0.2
0.5
mA
11.5 V
≤ V
P ≤ 22 V; IREG =50mA
1.4
2.5
mA
Enable input: pin EN
VI(EN)
enable input voltage
enable off; VREG ≤ 0.8 V
−1.0
+1.0
V
enable on; VREG ≥ 9.5 V
3.0
18
V
II(EN)
enable input current
VI(EN) =5V
0.3
−µA
Regulator output: pin REG; note 2
VREG
output voltage
13 V
≤ VP ≤ 22 V; IREG = 0.5 mA
9.6
10
10.4
V
11 V
≤ V
P ≤ 45 V; IREG = 0.5 mA;
Tamb ≤ 125 °C
9.5
10
10.5
V
0.5 mA
≤ I
REG ≤ 100 mA;
Tamb ≤ 125 °C
9.5
10
10.5
V
VREG(drop)
dropout voltage
VP = 9.5 V; IREG = 50 mA;
Tamb ≤ 85 °C
0.18
0.3
V
VREG(stab)
long-term stability voltage
20
mV/1000 h
∆V
REG(line)
line input regulation voltage
13 V
≤ VP ≤ 16 V; IREG = 0.5 mA
110
mV
12 V
≤ VP ≤ 22 V; IREG = 0.5 mA
130
mV
12 V
≤ V
P ≤ 45 V; Tamb ≤ 125 °C
150
mV
∆V
REG(load)
load output regulation
voltage
0.5 mA
≤ IREG ≤ 50 mA;
Tamb ≤ 125 °C
10
50
mV
SVRR
supply voltage ripple
rejection
fi = 120 Hz; Vi(ripple) = 1 V (RMS);
IREG = 0.5 mA
50
60
dB
IREG(crl)
current limit
VREG > 9.5 V
0.17
0.25
A
ILO(rp)
output leakage current at
reverse polarity
VP = −15 V; VREG ≤ 0.3 V
1
500
µA


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