(Preliminary)

ABV8037/38/39

38MHz-320MHz Low Phase Noise VCXO

30332 Esperanza., Rancho Santa Margarita, Ca 92688 Ph: 949-546-8000 Fax: 949-546-8001 www.Abracon.com 9/1/05 Page 5

4. General Electrical Specifications

PARAMETERS

SYMBOL

CONDITIONS

MIN.

TYP.

MAX.

UNITS

38MHz<Fout<100MHz

65/45/30

Supply Current,

Dynamic (with

Loaded Outputs)

PECL/LVDS/CMOS

100MHz<Fout<320MHz

80/60/40

mA

Operating Voltage

2.97

3.63

V

Output Clock

Duty Cycle

@ 1.25V (LVDS)

45

45

45

50

50

50

55

55

55

%

Short Circuit

Current

±50

mA

Note: CMOS operation is not advised above 200MHz with 15pF load; and 320MHz with 10pF load.

5. Jitter Specifications

PARAMETERS

CONDITIONS

FREQUENCY

MIN.

TYP.

MAX.

UNITS

155.52MHz

0.4

0.5

Integrated jitter RMS

Integrated 12 kHz to 20 MHz

311.04MHz

0.4

0.5

ps

77.76MHz

2.5

4

155.52MHz

3

5

Period jitter RMS

With capacitive decoupling

between VDD and GND.

Over 10,000 cycles.

311.04MHz

4

7

ps

77.76MHz

18

30

155.52MHz

20

30

Period jitter Peak-to-

Peak

With capacitive decoupling

between VDD and GND.

Over 10,000 cycles.

311.04MHz

25

35

ps

6. Phase Noise Specifications

PARAMETERS

FREQ.

@10Hz

@100Hz

@1kHz

@10kHz

@100kHz

@1M

@10M

UNITS

77.76MHz

-66

-96

-124

-134

-132

-145

-149

155.52MHz

-62

-92

-120

-132

-128

-144

-150

Phase Noise

relative to

carrier (typical)

311.04MHz

-59

-86

-116

-129

-124

-140

-148

dBc/Hz

Note: Phase Noise measured at VCON = 0V.

7. CMOS Electrical Characteristics

PARAMETERS

SYMBOL

CONDITIONS

MIN.

TYP.

MAX.

UNITS

30

mA

Output drive current

30

mA

Output Clock Rise/Fall Time

0.3V ~ 3.0V with 15 pF load

0.7

ns

Output Clock Rise/Fall Time

20%-80% with 50Ω Load

0.3

ns