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TDA8012M Datasheet(PDF) 5 Page - NXP Semiconductors |
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TDA8012M Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 16 page 1996 Mar 26 5 Philips Semiconductors Product specification Low power PLL FM demodulator for satellite TV receivers TDA8012M LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). HANDLING Inputs and outputs are protected against electrostatic discharge in normal handling. However, to be totally safe it is desirable to take normal precautions appropriate to handling MOS devices. THERMAL CHARACTERISTICS CHARACTERISTICS VCC =5V; fi = 480 MHz; Vi =57dBµV; Tamb =25 °C; measured in application circuit of Fig.4; unless otherwise specified. SYMBOL PARAMETER MIN. MAX. UNIT VCC supply voltage −0.3 6.0 V Vi(max) maximum input voltage on all pins −0.3 VCC V Isource(max) maximum output source current − 10 mA tsc maximum short-circuit time on all outputs − 10 s ZL AC load impedance at video output 600 −Ω Tstg storage temperature −55 +150 °C Tj junction temperature − +150 °C Tamb operating ambient temperature −10 +80 °C SYMBOL PARAMETER VALUE UNIT Rth j-a thermal resistance from junction to ambient in free air 120 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Supplies VCC supply voltage 4.75 5.0 5.25 V ICC supply current note 1 50 60 70 mA Voltage controlled oscillator KVCO voltage controlled oscillator constant VCC = 4.75 to 5.25 V; Tamb = −10 το +80 °C 22.5 25 27.5 MHz/V δf o/δT voltage controlled oscillator drift note 2 −−70 × 10−6 −°C−1 ∆fo voltage controlled oscillator shift VCC = 4.75 to 5.25 V −− ±750 kHz Frequency demodulator Vi input signal voltage level note 3 53 57 61 dB µV Zi input impedance real part; note 4 − 50 −Ω parallel inductive part; note 4 − 130 − nH KPD phase detector constant Vi =57dBµV − 0.37 − V/rad Gv phase-lock loop gain drift; note 5 − 2 − dB shift; note 5 − 2 − dB |
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