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J308 Datasheet(PDF) 4 Page - ON Semiconductor |
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J308 Datasheet(HTML) 4 Page - ON Semiconductor |
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4 / 6 page  J308 http://onsemi.com 4 30 24 18 12 6.0 0 1000 100 200 300 500 700 f, FREQUENCY (MHz) 3.0 2.4 1.8 1.2 0.6 |S21|, |S11| 0.45 0.39 0.33 0.27 0.21 0.15 0.85 0.79 0.73 0.67 0.61 0.55 |S12|, |S22| 0.060 0.048 0.036 0.024 0.012 1.00 0.98 0.96 0.94 0.92 0.90 1000 100 200 300 500 700 f, FREQUENCY (MHz) Figure 6. Common−Gate Y Parameter Magnitude versus Frequency Figure 7. Common−Gate S Parameter Magnitude versus Frequency f, FREQUENCY (MHz) ID, DRAIN CURRENT (mA) 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 4.0 6.0 8.0 10 12 14 16 18 20 22 24 24 21 18 15 12 9.0 6.0 3.0 0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 50 100 200 300 500 700 1000 26 22 18 14 10 6.0 2.0 VDS = 10 V ID = 10 mA TA = 25°C Y11 Y21 Y22 Y12 S22 S21 S11 S12 Gpg NF VDS = 10 V ID = 10 mA TA = 25°C VDD = 20 V f = 450 MHz BW ≈ 10 MHz CIRCUIT IN FIGURE 1 VDS = 10 V ID = 10 mA TA = 25°C CIRCUIT IN FIGURE 1 Gpg NF f, FREQUENCY (MHz) θ21, θ11 50 ° 40 ° 30 ° 20 ° 10 ° 0 ° 180 ° 170 ° 160 ° 150 ° 140 ° 130 ° θ12, θ22 −2 0 ° −40 ° −80 ° −120 ° −160 ° −200 ° −20 ° −60 ° −100 ° −140 ° −180 ° 87 ° 86 ° 85 ° 84 ° 83 ° 82 ° 1000 100 200 300 500 700 Figure 8. Common−Gate Y Parameter Phase−Angle versus Frequency f, FREQUENCY (MHz) θ11, θ12 120 ° 100 ° 80 ° 60 ° 40 ° 20 ° −20 ° −40 ° −60 ° −80 ° −100 ° −120 ° θ21, θ22 0 −40 ° −80 ° −20 ° −60 ° −100 ° 1000 100 200 300 500 700 Figure 9. S Parameter Phase−Angle versus Frequency θ22 θ21 θ12 θ11 VDS = 10 V ID = 10 mA TA = 25°C θ11 θ21 θ22 θ21 θ11 θ12 VDS = 10 V ID = 10 mA TA = 25°C Figure 10. Noise Figure and Power Gain versus Drain Current Figure 11. Noise Figure and Power Gain versus Frequency |
Similar Part No. - J308_06 |
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Similar Description - J308_06 |
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