TC1029 datasheet(2/14 Pages) MICROCHIP

Part #	TC1029

Description	Linear Building Block - Dual Low Power Op Amp

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Manufacturer	MICROCHIP [Microchip Technology]

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TC1029

DS21340B-page 2

1.0

ELECTRICAL

CHARACTERISTICS

ABSOLUTE MAXIMUM RATINGS*

Supply Voltage ......................................................6.0V

Voltage on Any Pin .......... (VSS – 0.5V) to (VDD +0.5V)

Junction Temperature....................................... +150°C

Operating Temperature Range............. -40°C to +85°C

Storage Temperature Range .............. -55°C to +150°C

*Stresses above those listed under "Absolute Maximum

Ratings" may cause permanent damage to the device. These

are stress ratings only and functional operation of the device

at these or any other conditions above those indicated in the

operation sections of the specifications is not implied.

Exposure to Absolute Maximum Rating conditions for

extended periods may affect device reliability.

TC1029 ELECTRICAL SPECIFICATIONS

Electrical Characteristics: Typical values apply at 25°C and VDD =3.0V; TA = -40° to +85°C, and VDD = 1.8V to 5.5V, unless

otherwise specified.

Symbol

Parameter

Min

Typ

Max

Units

Test Conditions

VDD

Supply Voltage

1.8

—

5.5

V

IQ

Supply Current, Operating

—

12

16

µA

All Outputs Open

AVOL

Large Signal Voltage Gain

—

100

—

V/mV

RL = 10kΩ,VDD =5V

VICMR

Common Mode Input Voltage

Range

VSS -0.2

—

VDD +0.2

V

VOS

Input Offset Voltage

±100

±0.3

±500

±1.5

µV

mV

VDD =3V, VCM =1.5V, TA =25°C,

TA = -40°C to 85°C

IB

Input Bias Current

-100

50

100

pA

TA =25°C; VCM =VDD to VSS

VOS(DRIFT) Input Offset Voltage Drift

—

±4

—

µV/°C

VDD =3V; VCM =1.5V

GBWP

Gain Bandwidth Product

—

90

—

kHz

VDD = 1.8V to 5.5V;

VO =VDD to VSS

SR

Slew Rate

—

35

—

mV/

µsec CL = 100pF;

RL = 1M to GND,

Gain = 1

VIN =VSS to VDD

VOUT

Output Signal Swing

VSS +0.05

—

VDD –0.05

V

RL = 10kΩ

CMRR

Common Mode Rejection Ratio

70

—

dB

TA =25°C; VDD =5V;

VCM =VDD to VSS

PSRR

Power Supply Rejection Ratio

80

—

dB

TA =25°C; VCM =VSS;

VDD =1.8V to 5V

ISRC

Output Source Current

3

—

mA

VIN =VDD

Output Shorted to VSS

VDD =1.8V; Gain =1

ISINK

Output Sink Current

4

—

mA

VIN =VSS,

Output Shorted to VDD

VDD =1.8V; Gain =1

En

Input Noise Voltage

—

10

—

µVpp

0.1Hz to 10Hz

en

Input Noise Voltage Density

—

125

—

nV

/√HZ

1kHz

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