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Symbol

Parameter

Conditions

Ratings

Unit

Po

Light output power

CW

60

mW

Pulse(Note 2)

70

VRL

Reverse voltage

2

V

-

Tc

Case temperature

-10

Tstg

Storage temperature

-

-40

Note2: TARGET SPEC /Condition Duty less than 50%,pulse width less than 0.1

µs

Note 1)

as of December '99

Note1: The maximum rating means the limitation over which the laser should not be operated even instant time,

and this does not mean the guarantee of its lifetime. As for the reliability,please refer to the reliability report from Mitsubishi

Semiconductor Quality Assurance Section.

°C

°C

Symbol

Parameter

Test conditions

Min.

Typ.

Max

Unit

Threshold current

CW

-

57

mA

Operating current

CW, Po=50mW

-

132

mA

Slope efficiency

CW, Po=50mW

-0.67

-

mW/mA

Peak wavelength

CW, Po=50mW

660

nm

Beam divergence angle

(parallel)

CW, Po=50mW

8.5

°

Beam divergence angle

(perpendicular)

CW, Po=50mW

22

°

Operating voltage

CW, Po=50mW

2.5

V

666

-

655

-

-

--

--

η

3.0

ABSOLUTE MAXIMUM RATINGS

ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25

°C)

MITSUBISHI

ELECTRIC

FOR OPTICAL INFORMATION SYSTEMS

ML1XX14 SERIES

MITSUBISHI LASER DIODES

FEATURES

APPLICATION

High-Density Optical Disc Drives

DESCRIPTION

ML1XX14 is a high power AlGaInP semiconductor laser which

provides a stable, single transverse mode

oscillation with

emission wavelength of 660 nm and standard PULSE light

output of 70mW.

ML1XX14 has a window-mirror-facet which improves the

maximum output power. That leads to highly reliable and high-

power operation.

TYPE

NAME

ML101J14, ML120G14

This Model is under development. Therefore, please note that this data sheet may be

changed without any notice.

Under

Devel

opme

nt

Preliminary