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ML1XX14 Datasheet(PDF) 1 Page - Mitsubishi Electric Semiconductor |
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ML1XX14 Datasheet(HTML) 1 Page - Mitsubishi Electric Semiconductor |
1 / 5 page ( 1 / 5 ) - Symbol Parameter Conditions Ratings Unit Po Light output power CW 60 mW Pulse(Note 2) 70 VRL Reverse voltage 2 V - Tc Case temperature -10 ~ +60 Tstg Storage temperature - -40 ~ +100 Note2: TARGET SPEC /Condition Duty less than 50%,pulse width less than 0.1 µs Note 1) as of December '99 Note1: The maximum rating means the limitation over which the laser should not be operated even instant time, and this does not mean the guarantee of its lifetime. As for the reliability,please refer to the reliability report from Mitsubishi Semiconductor Quality Assurance Section. °C °C Symbol Parameter Test conditions Min. Typ. Max Unit Ith Threshold current CW - 57 mA Iop Operating current CW, Po=50mW - 132 mA Slope efficiency CW, Po=50mW -0.67 - mW/mA Peak wavelength CW, Po=50mW 660 nm Beam divergence angle (parallel) CW, Po=50mW 8.5 ° Beam divergence angle (perpendicular) CW, Po=50mW 22 ° Vop Operating voltage CW, Po=50mW 2.5 V 666 - 655 - - -- -- η λp θ// θ⊥ 3.0 ABSOLUTE MAXIMUM RATINGS ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25 °C) MITSUBISHI ELECTRIC FOR OPTICAL INFORMATION SYSTEMS ML1XX14 SERIES MITSUBISHI LASER DIODES FEATURES • High Output Power: 50mW (CW) , 70mW (Pulse) • Visible Light: 660nm (typ.) APPLICATION High-Density Optical Disc Drives Rewritable DVD(Digital Versatile Disc) Drives DESCRIPTION ML1XX14 is a high power AlGaInP semiconductor laser which provides a stable, single transverse mode oscillation with emission wavelength of 660 nm and standard PULSE light output of 70mW. ML1XX14 has a window-mirror-facet which improves the maximum output power. That leads to highly reliable and high- power operation. TYPE NAME ML101J14, ML120G14 This Model is under development. Therefore, please note that this data sheet may be changed without any notice. Under Devel opme nt Preliminary |
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