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GL9575 Datasheet(PDF) 2 Page - GTM CORPORATION |
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GL9575 Datasheet(HTML) 2 Page - GTM CORPORATION |
2 / 4 page GL9575 Page: 2/4 ISSUED DATE :2005/02/18 REVISED DATE : Electrical Characteristics(Tj = 25 Unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BVDSS -60 - - V VGS=0, ID=-250uA Breakdown Voltage Temperature Coefficient BVDSS / Tj - -0.04 - V/ : Reference to 25 : , ID=-1mA Gate Threshold Voltage VGS(th) -1.0 - -3.0 V VDS=VGS, ID=-250uA Forward Transconductance gfs - 7 - S VDS=-10V, ID=-4A Gate-Source Leakage Current IGSS - - D100 nA VGS= D25V Drain-Source Leakage Current(Tj=25 : ) - - -1 uA VDS=-60V, VGS=0 Drain-Source Leakage Current(Tj=70 : ) IDSS - - -25 uA VDS=-48V, VGS=0 - - 90 VGS=-10V, ID=-4A Static Drain-Source On-Resistance2 RDS(ON) - - 120 m Ł VGS=-4.5V, ID=-3A Total Gate Charge2 Qg - 18 28 Gate-Source Charge Qgs - 5 - Gate-Drain (“Miller”) Change Qgd - 7 - nC ID=-4A VDS=-48V VGS=-4.5V Turn-on Delay Time2 Td(on) - 12 - Rise Time Tr - 5 - Turn-off Delay Time Td(off) - 68 - Fall Time Tf - 32 - ns VDS=-30V ID=-1A VGS=-10V RG=3.3 Ł RD=30 Ł Input Capacitance Ciss - 1745 2790 Output Capacitance Coss - 165 - Reverse Transfer Capacitance Crss - 125 - pF VGS=0V VDS=-25V f=1.0MHz Source-Drain Diode Parameter Symbol Min. Typ. Max. Unit Test Conditions Forward On Voltage2 VSD - - -1.2 V IS=-2A, VGS=0V Reverse Recovery Time2 Trr - 56 - ns Reverse Recovery Charge Qrr - 146 - nC IS=-4A, VGS=0V dI/dt=100A/ s Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 125 : /W when mounted on Min. copper pad. |
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