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IRG4BC30WPBF Datasheet(PDF) 1 Page - International Rectifier |
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IRG4BC30WPBF Datasheet(HTML) 1 Page - International Rectifier |
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1 / 8 page  Parameter Max. Units VCES Collector-to-Emitter Breakdown Voltage 600 V IC @ TC = 25°C Continuous Collector Current 23 IC @ TC = 100°C Continuous Collector Current 12 A ICM Pulsed Collector Current Q 92 ILM Clamped Inductive Load Current R 92 VGE Gate-to-Emitter Voltage ± 20 V EARV Reverse Voltage Avalanche Energy S 180 mJ PD @ TC = 25°C Maximum Power Dissipation 100 PD @ TC = 100°C Maximum Power Dissipation 42 TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case ) °C Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m) IRG4BC30WPbF INSULATEDGATEBIPOLARTRANSISTOR PD - 95173 E C G n-channel Features • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50% reduction of Eoff parameter • Low IGBT conduction losses • Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability • Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 kHz ("hard switched" mode) • Of particular benefit to single-ended converters and boost PFC topologies 150W and higher • Low conduction losses and minimal minority-carrier recombination make these an excellent option for resonant mode switching as well (up to >>300 kHz) Benefits VCES = 600V VCE(on) max. = 2.70V @VGE = 15V, IC = 12A 04/23/04 Parameter Typ. Max. Units RθJC Junction-to-Case ––– 1.2 RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W RθJA Junction-to-Ambient, typical socket mount ––– 80 Wt Weight 1.44 ––– g Thermal Resistance Absolute Maximum Ratings W TO-220AB www.irf.com 1 • Lead-Free |
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