GP2030S

Page: 1/7

ISSUED DATE :2005/08/10

REVISED DATE :

G

S

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

The GP2030S provide the designer with the best combination of fast switching, ruggedized device design, low

on-resistance and cost-effectiveness.

Features

*Simple Drive Requirement

*Lower On-resistance

*Fast Switching

Package Dimensions

Millimeter

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

-

0.5334

c1

0.203

0.279

A1

0.381

-

D

9.017

10.16

A2

2.921

4.953

E

6.096

7.112

b

0.356

0.559

E1

7.620

8.255

b1

0.356

0.508

e

2.540 BSC

b2

1.143

1.778

HE

-

10.92

b3

0.762

1.143

L

2.921

3.810

c

0.203

0.356

Absolute Maximum Ratings

Ratings

Parameter

Symbol

N-channel P-channel

Unit

Drain-Source Voltage

20

-20

V

Gate-Source Voltage

f 12

f 12

V

2.6

-2.3

A

2.1

-1.8

A

15

-10

A

Total Power Dissipation

2.0

W

Linear Derating Factor

0.016

W/

Operating Junction and Storage Temperature Range

Tj, Tstg

-55 ~ +150

Thermal Data

Parameter

Symbol

Value

Unit

Max.

Rthj-a

62.5

/W

Pb Free Plating Product

20V

2.6A

-20V

-2.3A

SEATING PLANE

e

b

Z

Z

D

SECTION Z - Z

b

GAUGE PLANE

DIP-8