TEA1068 datasheet(10/24 Pages) PHILIPS

Part #	TEA1068

Description	Versatile telephone transmission circuit with dialler interface

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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10 / 24 page

1996 Apr 23

10

Philips Semiconductors

Product speciﬁcation

Versatile telephone transmission circuit

with dialler interface

TEA1068

CHARACTERISTICS

Iline = 10 to 140 mA; VEE = 0 V; f = 800 Hz; Tamb =25 °C; unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Supplies: LN and VCC

VLN

voltage drop over circuit between

LN and VEE

microphone inputs open

Iline = 5 mA

3.95

4.25

4.55

V

Iline = 15 mA

4.2

4.45

4.7

V

Iline = 100 mA

5.4

6.1

6.7

V

Iline = 140 mA

−−

7.5

V

∆V

LN/∆T

voltage drop variation with

temperature

Iline =15mA

−4

−2

0

mV/K

VLN

voltage drop over circuit, between

LN and VEE with external resistor

RVA

Iline =15mA

RVA (LN to REG) = 68 kΩ

3.45

3.8

4.1

V

RVA (REG to SLPE) = 39 kΩ

4.65

5

5.35

V

ICC

supply current

VCC = 2.8 V

PD = LOW

−

0.96

1.3

mA

PD = HIGH

−

55

82

µA

VCC

supply voltage available for

peripheral circuitry

Iline = 15 mA; MUTE = HIGH

Ip = 1.2 mA

2.8

3.05

−

V

Ip = 0 mA

3.5

3.75

−

V

Microphone inputs MIC+ and MIC

−

Zi

input impedance

differential between

MIC+ and MIC

−

51

64

77

k

Ω

single-ended MIC+ or

MIC

− to V

EE

25.5

32

38.5

k

Ω

CMRR

common mode rejection ratio

−

82

−

dB

Gv

voltage gain from MIC+/MIC

− to LN Iline = 15 mA; R7 = 68 kΩ;51

52

53

dB

∆G

vf

gain variation with frequency at

f = 300 Hz and f = 3400 Hz

with respect to 800 Hz

−0.5

±0.2

+0.5

dB

∆G

vT

gain variation with temperature at

−25 °C and +75 °C

Iline =50mA;

with respect to 25

°C; without

R6

−±0.2

−

dB

Dual-tone multi-frequency input DTMF

Zi

input impedance

16.8

20.7

24.6

k

Ω

Gv

voltage gain from DTMF to LN

Iline = 15 mA; R7 = 68 kΩ

24.5

25.5

26.5

dB

∆G

vf

gain variation with frequency at

f = 300 Hz and f = 3400 Hz

with respect to 800 Hz

−0.5

±0.2

+0.5

dB

∆G

vT

gain variation with temperature at

Tamb =−25 °C and +75 °C

Iline =50mA;

with respect to 25

°C

−±0.5

−

dB

Gain adjustment connections GAS1 and GAS2

∆Gv

gain variation with R7, transmitting

ampliﬁer

−8

−

+8

dB

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