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TEA1068 Datasheet(PDF) 10 Page - NXP Semiconductors |
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TEA1068 Datasheet(HTML) 10 Page - NXP Semiconductors |
10 / 24 page 1996 Apr 23 10 Philips Semiconductors Product specification Versatile telephone transmission circuit with dialler interface TEA1068 CHARACTERISTICS Iline = 10 to 140 mA; VEE = 0 V; f = 800 Hz; Tamb =25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Supplies: LN and VCC VLN voltage drop over circuit between LN and VEE microphone inputs open Iline = 5 mA 3.95 4.25 4.55 V Iline = 15 mA 4.2 4.45 4.7 V Iline = 100 mA 5.4 6.1 6.7 V Iline = 140 mA −− 7.5 V ∆V LN/∆T voltage drop variation with temperature Iline =15mA −4 −2 0 mV/K VLN voltage drop over circuit, between LN and VEE with external resistor RVA Iline =15mA RVA (LN to REG) = 68 kΩ 3.45 3.8 4.1 V RVA (REG to SLPE) = 39 kΩ 4.65 5 5.35 V ICC supply current VCC = 2.8 V PD = LOW − 0.96 1.3 mA PD = HIGH − 55 82 µA VCC supply voltage available for peripheral circuitry Iline = 15 mA; MUTE = HIGH Ip = 1.2 mA 2.8 3.05 − V Ip = 0 mA 3.5 3.75 − V Microphone inputs MIC+ and MIC − Zi input impedance differential between MIC+ and MIC − 51 64 77 k Ω single-ended MIC+ or MIC − to V EE 25.5 32 38.5 k Ω CMRR common mode rejection ratio − 82 − dB Gv voltage gain from MIC+/MIC − to LN Iline = 15 mA; R7 = 68 kΩ;51 52 53 dB ∆G vf gain variation with frequency at f = 300 Hz and f = 3400 Hz with respect to 800 Hz −0.5 ±0.2 +0.5 dB ∆G vT gain variation with temperature at −25 °C and +75 °C Iline =50mA; with respect to 25 °C; without R6 −±0.2 − dB Dual-tone multi-frequency input DTMF Zi input impedance 16.8 20.7 24.6 k Ω Gv voltage gain from DTMF to LN Iline = 15 mA; R7 = 68 kΩ 24.5 25.5 26.5 dB ∆G vf gain variation with frequency at f = 300 Hz and f = 3400 Hz with respect to 800 Hz −0.5 ±0.2 +0.5 dB ∆G vT gain variation with temperature at Tamb =−25 °C and +75 °C Iline =50mA; with respect to 25 °C −±0.5 − dB Gain adjustment connections GAS1 and GAS2 ∆Gv gain variation with R7, transmitting amplifier −8 − +8 dB |
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