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GSS4503 Datasheet(PDF) 3 Page - GTM CORPORATION |
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GSS4503 Datasheet(HTML) 3 Page - GTM CORPORATION |
3 / 7 page GSS4503 Page: 3/7 ISSUED DATE :2005/07/29 REVISED DATE :2005/09/29B P-Channel Electrical Characteristics(Tj = 25 Unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BVDSS -30 - - V VGS=0, ID=-250uA Breakdown Voltage Temperature Coefficient BVDSS / Tj - -0.004 - V/ : Reference to 25 : , ID=-1mA Gate Threshold Voltage VGS(th) -1.0 - -3.0 V VDS=VGS, ID=-250uA Forward Transconductance gfs - 5.8 - S VDS=-10V, ID=-6A Gate-Source Leakage Current IGSS - - D100 nA VGS= D20V Drain-Source Leakage Current(Tj=25 : ) - - -1 uA VDS=-30V, VGS=0 Drain-Source Leakage Current(Tj=70 : ) IDSS - - -25 uA VDS=-24V, VGS=0 - - 36 VGS=-10V, ID=-6A Static Drain-Source On-Resistance2 RDS(ON) - - 55 m Ł VGS=-4.5V, ID=-4A Total Gate Charge2 Qg - 15 24 Gate-Source Charge Qgs - 3 - Gate-Drain (“Miller”) Change Qgd - 9 - nC ID=-6A VDS=-24V VGS=-4.5V Turn-on Delay Time2 Td(on) - 12 - Rise Time Tr - 8 - Turn-off Delay Time Td(off) - 42 - Fall Time Tf - 34 - ns VDS=-15V ID=-1A VGS=-10V RG=3.3 Ł RD=15 Ł Input Capacitance Ciss - 960 1540 Output Capacitance Coss - 300 - Reverse Transfer Capacitance Crss - 220 - pF VGS=0V VDS=-25V f=1.0MHz Source-Drain Diode Parameter Symbol Min. Typ. Max. Unit Test Conditions Forward On Voltage2 VSD - - -1.2 V IS=-6A, VGS=0V, Tj=25 : Reverse Recovery Time Trr - 24 - ns Reverse Recovery Charge Qrr - 18 - nC IS=-6A, VGS=0V dI/dt=100A/ s Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 135 : /W when mounted on Min. copper pad. |
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