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GSS9930 Datasheet(PDF) 2 Page - GTM CORPORATION |
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GSS9930 Datasheet(HTML) 2 Page - GTM CORPORATION |
2 / 7 page GSS9930 Page: 2/7 ISSUED DATE :2005/10/13 REVISED DATE : N-Channel Electrical Characteristics (Tj = 25 :::: unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BVDSS 30 - - V VGS=0, ID=250uA Breakdown Voltage Temperature Coefficient BVDSS / Tj - 0.037 - V/ : Reference to 25 : , ID=1mA Gate Threshold Voltage VGS(th) 1.0 - 3.0 V VDS=VGS, ID=250uA Forward Transconductance gfs - 5.2 - S VDS=10V, ID=5A Gate-Source Leakage Current IGSS - - ±100 nA VGS= ±25V Drain-Source Leakage Current(Tj=25 : ) - - 1 uA VDS=30V, VGS=0 Drain-Source Leakage Current(Tj=70 : ) IDSS - - 25 uA VDS=24V, VGS=0 - - 33 VGS=10V, ID=5A Static Drain-Source On-Resistance2 RDS(ON) - - 60 m VGS=4.5V, ID=3A Total Gate Charge2 Qg - 7.1 - Gate-Source Charge Qgs - 2.3 - Gate-Drain (“Miller”) Change Qgd - 3.8 - nC ID=5A VDS=15V VGS=4.5V Turn-on Delay Time2 Td(on) - 7.2 - Rise Time Tr - 10.4 - Turn-off Delay Time Td(off) - 18 - Fall Time Tf - 7.8 - ns VDS=15V ID=1A VGS=10V RG=6 RD=15 Input Capacitance Ciss - 600 - Output Capacitance Coss - 230 - Reverse Transfer Capacitance Crss - 94 - pF VGS=0V VDS=25V f=1.0MHz Source-Drain Diode Parameter Symbol Min. Typ. Max. Unit Test Conditions Forward On Voltage2 VSD - - 1.2 V IS=1.7A, VGS=0V, Tj=25 : Reverse Recovery Time Trr - 21.4 - ns Reverse Recovery Charge Qrr - 16 - nC IS=1.7A, VGS=0V dI/dt=100A/ s Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 135 : /W when mounted on Min. copper pad. |
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