TEA1610 datasheet(11/20 Pages) PHILIPS

Part #	TEA1610

Description	Zero-voltage-switching resonant converter controller

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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11 / 20 page

2001 Apr 25

11

Philips Semiconductors

Product speciﬁcation

Zero-voltage-switching

resonant converter controller

TEA1610P; TEA1610T

Notes

1. Supply current IDD will increase with increasing bridge frequency to drive the capacitive load of two MOSFETs.

Typical MOSFETs for the TEA1610 application are 8N50 (Philips type PHX80N50E, Qg(tot) = 55 nC typ.) and these

will increase the supply current at 150 kHz according to the following formula:

∆IDD =2 × Qg(tot) × fbridge =2 × 55 nC × 150 kHz = 16.5 mA.

2. The frequency of the oscillator depends on the value of capacitor Cf, the peak-to-peak voltage swing VCF and the

charge/discharge currents ICF(ch) and ICF(dis).

VCF(L)

CF trip level LOW

DC level

−

1.27

−

V

VCF(H)

CF trip level HIGH

DC level

−

3.0

−

V

VCf(p-p)

Cf voltage (peak-to-peak value)

1.63

1.73

1.83

V

tdt

dead time

Cf = 100 pF; IIFS = 0.5 mA;

IIRS =50 µA

0.37

0.40

0.43

µs

Output drivers

IGH(source)

high side output source current

VDD(F) =13V; VSH = 0; VGH =0

−135

−180

−225

mA

IGH(sink)

high side output sink current

VDD(F) =13V; VSH =0;

VGH =13V

−

300

−

mA

IGL(source)

low side output source current

VGL =0

−135

−180

−225

mA

IGL(sink)

low side output sink current

VGL =14V

−

300

−

mA

VGH(H)

high side output voltage HIGH

VDD(F) =13V; VSH =0;

IGH =10mA

10.8

12

−

V

VGH(L)

high side output voltage LOW

VDD(F) =13V; VSH =0;

IGH =10mA

−

0.2

0.5

V

VGL(H)

low side output voltage HIGH

IGL = 10 mA

10.8

12

−

V

VGL(L)

low side output voltage LOW

IGL =10mA

−

0.2

0.5

V

Vd(boot)

bootstrap diode voltage drop

I = 5 mA

1.5

1.8

2.1

V

Shut-down input pin SD

ISD

input current

VSD = 2.33 V

0

0.2

0.5

µA

VSD(th)

threshold level

2.26

2.33

2.40

V

Error ampliﬁer pins I

+, I−, VCO

II(CM)

common mode input current

VI(CM) =1V

−−0.1

−0.5

µA

VI(CM)

common mode input voltage

−−

2.5

V

VI(offset)

input offset voltage

VI(CM) =1V; IVCO = −10 mA

−2

0

+2

mV

gm

transconductance

VI(CM) = 1 V; source only

−

330

−µA/mV

Ao

open loop gain

RL =10kΩ to GND; VI(CM) =1V −

70

−

dB

GB

gain bandwidth product

RL =10kΩ to GND; VI(CM) =1V −

5

−

MHz

VVCO(max)

maximum output voltage

operating; RL =10kΩ to GND

3.2

3.6

4.0

V

IVCO(max)

maximum output current

operating; VVCO =1V

−0.4

−0.5

−0.6

mA

VVCO(start)

output voltage during start-up

IVCO = 0.3 mA

2.30

2.50

2.70

V

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

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