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TEA6323 Datasheet(PDF) 9 Page - NXP Semiconductors |
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TEA6323 Datasheet(HTML) 9 Page - NXP Semiconductors |
9 / 36 page 1995 Dec 20 9 Philips Semiconductors Preliminary specification Sound fader control circuit TEA6323T Vi(rms) maximum input voltage (RMS value) THD < 0.5% − 2.15 − V Vno noise output voltage CCIR468-2 weighted; quasi peak Gv =20dB − 110 220 µV Gv =0dB − 33 50 µV Gv = −66 dB − 13 22 µV mute position − 10 −µV CRtot total continuous control range − 106 − dB recommended control range − 86 − dB Gstep step resolution − 1 − dB step error between any adjoining step −− 0.5 dB ∆G a attenuator set error Gv = +20 to −50 dB −− 2dB Gv = −51 to −66 dB −− 3dB ∆Gt gain tracking error Gv = +20 to −50 dB −− 2dB MUTEatt mute attenuation see Fig.9 100 110 − dB Voffset DC step offset between any adjoining step Gv =0to −66 dB − 0.2 10 mV Gv =20to0dB − 215 mV DC step offset between any step to mute Gv =0to −66 dB −− 10 mV Gv =20to0dB −− 40 mV Gv =0to −31 dB; loudness on −− 17 mV Volume I control and loudness CRvol continuous volume control range − 51 − dB Gv voltage gain −31 − +20 dB Gstep step resolution − 1 − dB LBmax maximum loudness boost loudness on; referred to loudness off; boost is determined by external components f = 40 Hz − 17 − dB f = 10 kHz − 4.5 − dB Bass control Gbass bass control, maximum boost f = 46 Hz 16 18 19 dB maximum attenuation f = 46 Hz 16 18 19 dB Gstep step resolution (toggle switching) f = 46 Hz − 1.8 − dB step error between any adjoining step f = 46 Hz −− 0.5 dB Voffset DC step offset in any bass position −− 20 mV SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT |
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