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FDS8858CZ Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FDS8858CZ Datasheet(HTML) 2 Page - Fairchild Semiconductor |
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2 / 10 page  www.fairchildsemi.com 2 ©2007 Fairchild Semiconductor Corporation FDS8858CZ Rev.B Electrical Characteristics T J = 25°C unless otherwise noted Symbol Parameter Test Conditions Type Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V ID = -250µA, VGS = 0V Q1 Q2 30 -30 V ∆BV DSS ∆T J Breakdown Voltage Temperature Coefficient ID = 250µA, referenced to 25°C ID = -250µA, referenced to 25°C Q1 Q2 22 22 mV/°C IDSS Zero Gate Voltage Drain Current VDS = 24V, VGS = 0V VDS = -24V, VGS = 0V Q1 Q2 1 -1 µA IGSS Gate to Source Leakage Current VGS = ±20V, VDS = 0V VGS = ±25V, VDS = 0V Q1 Q2 ±10 ±10 µA On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA VGS = VDS, ID = -250µA Q1 Q2 1 -1 1.6 -2.1 3 -3 V ∆V GS(th) ∆T J Gate to Source Threshold Voltage Temperature Coefficient ID = 250µA, referenced to 25°C ID = -250µA, referenced to 25°C Q1 Q2 -5.4 -6.0 mV/°C rDS(on) Static Drain to Source On Resistance VGS = 10V, ID = 8.6A VGS = 4.5V, ID = 7.3A VGS = 10V, ID = 8.6A, TJ = 125°C Q1 12.4 15.2 17.7 17.0 20.0 24.3 m Ω VGS = -10V, ID = -7.3A VGS = -4.5V, ID = -5.6A VGS = -10V, ID = -7.3A, TJ = 125°C Q2 17.1 26.5 24.0 20.5 34.5 28.8 gFS Forward Transconductance VDS = 5V, ID = 8.6A VDS = -5V, ID = -7.3A Q1 Q2 27 21 S Dynamic Characteristics Ciss Input Capacitance Q1 VDS = 15V, VGS = 0V, f = 1MHZ Q2 VDS = -15V, VGS = 0V, f = 1MHZ Q1 Q2 905 1675 1205 2230 pF Coss Output Capacitance Q1 Q2 180 290 240 390 pF Crss Reverse Transfer Capacitance Q1 Q2 110 260 165 390 pF Rg Gate Resistance f = 1MHz Q1 Q2 1.3 4.4 Ω Switching Characteristics td(on) Turn-On Delay Time Q1 VDD = 15V, ID = 8.6A, VGS = 10V, RGEN = 6Ω Q2 VDD = -15V, ID = -7.3A, VGS = -10V, RGEN = 6Ω Q1 Q2 7 9 14 18 ns tr Rise Time Q1 Q2 3 10 10 20 ns td(off) Turn-Off Delay Time Q1 Q2 19 33 35 53 ns tf Fall Time Q1 Q2 3 16 10 29 ns Qg(TOT) Total Gate Charge Q1 VGS = 10V, VDD = 15V, ID = 8.6A Q2 VGS = -10V, VDD = -15V, ID = -7.3A Q1 Q2 17 33 24 46 nC Qgs Gate to Source Charge Q1 Q2 2.7 6.1 nC Qgd Gate to Drain “Miller” Charge Q1 Q2 3.4 8.5 nC |
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