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P3C1011-10TI Datasheet(PDF) 2 Page - Pyramid Semiconductor Corporation |
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P3C1011-10TI Datasheet(HTML) 2 Page - Pyramid Semiconductor Corporation |
2 / 10 page P3C1011 Page 2 of 10 Document # SRAM131 REV OR MAXIMUM RATINGS(1) Symbol Parameter Value Unit V CC Power Supply Pin with –0.5 to +4.6 V Respect to GND Terminal Voltage with –0.5 to V TERM Respect to GND V CC +0.5 V T A Operating Temperature –55 to +125 °C Symbol Parameter Value Unit T BIAS Temperature Under –55 to +125 °C Bias T STG Storage Temperature –65 to +150 °C I OUT DC Output Current 20 mA RECOMMENDED OPERATING TEMPERATURE AND SUPPLY VOLTAGE I SB Standby Power Supply Current (TTL Input Levels) CE ≥ V IH V CC= Max, f = Max., Outputs Open V IN ≥ VIH or VIN ≤ VIL CE ≥ V CC - 0.2V V CC= Max, f = 0, Outputs Open V IN ≥ VCC - 0.3V or V IN ≤ 0.3V Standby Power Supply Current (CMOS Input Levels) I SB1 Industrial Grade(2) Ambient Temperature V SS V CC 0V 0V 3.3V ± 0.3V 3.3V ± 0.3V Symbol C IN C OUT Parameter Input Capacitance I/O Capacitance Conditions V IN = 0V V OUT = 0V 8 8 Unit pF pF CAPACITANCES(4) V CC = 3.3V, TA = 25°C, f = 1.0MHz Symbol DC ELECTRICAL CHARACTERISTICS Over recommended operating temperature and supply voltage(2) V IH I LI I LO Parameter Input High Voltage Input Low Voltage Input Leakage Current Test Conditions V CC = Max. V IN = GND to VCC V CC = Max., CE = V IH, V OUT = GND to VCC Typ. Commercial –40°C to +85°C 0°C to +70°C Unit V V µA µA mA mA V OL Output Low Voltage (TTL Load) I OL = +8 mA, VCC = Min. V Output High Voltage (TTL Load) V OH I OH = –4 mA, VCC = Min. V Output Leakage Current P3C1011 ___ 40 10 ___ Min 2.0 –0.3(3) -1 -1 Max V CC +0.3 0.8 +1 +1 0.4 2.4 V IL 0V 3.3V ± 0.3V Military -55°C to +125°C |
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