P3C1011-10TI datasheet(2/10 Pages) PYRAMID

Part #	P3C1011-10TI

Description	HIGH SPEED 128K x 16 (2 MEG) STATIC CMOS RAM

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Manufacturer	PYRAMID [Pyramid Semiconductor Corporation]

Direct Link	http://www.pyramidsemiconductor.com

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P3C1011

Page 2 of 10

Document # SRAM131 REV OR

MAXIMUM RATINGS(1)

Symbol

Parameter

Value

Unit

V

CC

Power Supply Pin with

–0.5 to +4.6

V

Respect to GND

Terminal Voltage with

–0.5 to

V

TERM

Respect to GND

V

CC +0.5

V

T

A

Operating Temperature

–55 to +125

°C

Symbol

Parameter

Value

Unit

T

BIAS

Temperature Under

–55 to +125

°C

Bias

T

STG

Storage Temperature

–65 to +150

°C

I

OUT

DC Output Current

20

mA

RECOMMENDED OPERATING

TEMPERATURE AND SUPPLY VOLTAGE

I

SB

Standby Power Supply

Current (TTL Input Levels)

CE

≥ V

IH

V

CC= Max,

f = Max., Outputs Open

V

IN ≥ VIH or VIN ≤ VIL

CE

≥ V

CC - 0.2V

V

CC= Max,

f = 0, Outputs Open

V

IN ≥ VCC - 0.3V or

V

IN ≤ 0.3V

Standby Power Supply

Current

(CMOS Input Levels)

I

SB1

Industrial

Grade(2)

Ambient

Temperature

V

SS

V

CC

0V

3.3V ± 0.3V

Symbol

C

IN

C

OUT

Parameter

Input Capacitance

I/O Capacitance

Conditions

V

IN = 0V

V

OUT = 0V

8

Unit

pF

CAPACITANCES(4)

V

CC = 3.3V, TA = 25°C, f = 1.0MHz

Symbol

DC ELECTRICAL CHARACTERISTICS

Over recommended operating temperature and supply voltage(2)

V

IH

I

LI

I

LO

Parameter

Input High Voltage

Input Low Voltage

Input Leakage Current

Test Conditions

V

CC = Max.

V

IN = GND to VCC

V

CC = Max.,

CE = V

IH,

V

OUT = GND to VCC

Typ.

Commercial

–40°C to +85°C

0°C to +70°C

Unit

V

µA

mA

V

OL

Output Low Voltage

(TTL Load)

I

OL = +8 mA, VCC = Min.

V

Output High Voltage

(TTL Load)

V

OH

I

OH = –4 mA, VCC = Min.

V

Output Leakage Current

P3C1011

___

40

10

___

Min

2.0

–0.3(3)

-1

Max

V

CC +0.3

0.8

+1

0.4

2.4

V

IL

0V

3.3V ± 0.3V

Military

-55°C to +125°C

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