BF996S datasheet(2/5 Pages) TEMIC

Part #	BF996S

Description	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

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Manufacturer	TEMIC [TEMIC Semiconductors]

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BF996S

TELEFUNKEN Semiconductors

Rev. A1, 17-Apr-96

2 (5)

Electrical DC Characteristics

Tamb = 25°C

Parameters / Test Conditions

Type

Symbol

Min.

Typ.

Max.

Unit

Drain-source breakdown voltage

ID = 10

mA, –VG1S = –VG2S = 4 V

V(BR)DS

20

V

Gate 1-source breakdown voltage

±IG1S = 10 mA, VG2S = VDS = 0

±V(BR)G1SS

8

14

V

Gate 2-source breakdown voltage

±IG2S = 10 mA, VG1S = VDS = 0

±V(BR)G2SS

8

14

V

Gate 1-source leakage current

±VG1S = 5 V, VG2S = VDS = 0

±IG1SS

50

nA

Gate 2-source leakage current

±VG2S = 5 V, VG1S = VDS = 0

±IG2SS

50

nA

Drain current

VDS = 15 V, VG1S = 0, VG2S = 4 V

BF 996 S

BF 996 SA

BF 996 SB

IDSS

4

9.5

18

10.5

18

mA

Gate 1-source cut-off voltage

VDS = 15 V, VG2S = 4 V, ID = 20

mA

–VG1S(OFF)

2.5

V

Gate 2-source cut-off voltage

VDS = 15 V, VG1S = 0, ID = 20

mA

–VG2S(OFF)

2.0

V

Electrical AC Characteristics

VDS = 15 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz, Tamb = 25°C

Parameters / Test Conditions

Type

Symbol

Min.

Typ.

Max.

Unit

Forward transadmittance

y21s

15

18.5

mS

Gate 1 input capacitance

Cissg1

2.2

2.6

pF

Gate 2 input capacitance

VG1S = 0, VG2S = 4 V

Cissg2

1.1

pF

Feedback capacitance

Crss

25

35

fF

Output capacitance

Coss

10.8

1.2

pF

Power gain

VDS = 15 V, ID = 10 mA, VG2S = 4 V,

gS = 2 mS, gL = 0.5 mS, f = 200 MHz

gS = 3.3 mS, gL = 1 mS, f = 800 MHz

Gps

25

18

dB

AGC range

VDS = 15 V, VG2S = 4 to –2 V,

f = 800 MHz

∆Gps

40

dB

Noise figure

VDS = 15 V, ID = 10 mA, VG2S = 4 V,

gS = 2 mS, f = 200 MHz

gS = 3.3 mS, f = 800 MHz

F

1.0

1.8

dB

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