Optek Technology, Inc.

1215 W. Crosby Road

Carrollton, Texas 75006

(972) 323-2200

Fax (972) 323-2396

Absolute Maximum Ratings

Drain-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90 V

Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

±20 V

Drain Current (Limited by Tj max) N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 A

P-Channel. . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.1 A

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . -55

Power Dissipation

(Ts = Substrate that the package is soldered to)

Notes

(1) This rating is provided as an aid to designers. It is dependent upon mounting material and

methods and is not measureable as an outgoing test.

Product Bulletin HCT802

September 1996

Dual Enhancement Mode MOSFET

Types HCT802, HCT802TX, HCT802TXV

Features

P-Channel = 1.1A

Description

HCT802 offers an N-Channel and P-

Channel MOS transistor in a hermetic

ceramic surface mount package. The

devices used are similar to industry

standards 2N6661 N-Channel device

and VP1008 P-Channel device. These

two enhancement mode MOSFETS

Order HCT802TX for processing per

MIL-PRF-19500. Typical screening

and lot acceptance tests are provided

on page 13-4. TX products receive a

o

at 150

15-34