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M63803P Datasheet(PDF) 1 Page - Mitsubishi Electric Semiconductor |
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M63803P Datasheet(HTML) 1 Page - Mitsubishi Electric Semiconductor |
1 / 4 page Jan. 2000 VCEO IC VI Pd Topr Tstg Unit : Ω The seven circuits share the GND. The diode, indicated with the dotted line, is parasitic, and cannot be used. INPUT OUTPUT GND 10.5k 10k 16P4(P) 16P2N-A(FP) 16P2S-A(GP) 16P2Z-A(KP) IN7→ 7 10 IN5→ 5 12 INPUT OUTPUT IN4 → 4 13 IN3→ 3 IN2→ 2 15 1 IN1 → 16 GND NC 9 8 IN6→ 6 11 NC : No connection → O1 → O2 → O3 → O4 → O5 → O6 → O7 14 Package type Collector-emitter voltage Collector current Input voltage Power dissipation Operating temperature Storage temperature PIN CONFIGURATION MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63803P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY DESCRIPTION M63803P, M63803FP, M63803GP and M63803KP are seven-circuit Singe transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated cir- cuits perform high-current driving with extremely low input- current supply. FEATURES q Four package configurations (P, FP, GP and KP) q Medium breakdown voltage (BVCEO ≥35V) q Synchronizing current (IC(max) = 300mA) q Low output saturation voltage q Wide operating temperature range (Ta = –40 to +85 °C) APPLICATION Driving of digit drives of indication elements (LEDs and lamps) with small signals FUNCTION The M63803P, M63803FP, M63803GP and M63803KP each have seven circuits consisting of NPN transistor. The transis- tor emitters are all connected to the GND pin (pin 8) The transistors allow synchronous flow of 300mA collector current. A maximum of 35V voltage can be applied between the collector and emitter. CIRCUIT DIAGRAM V mA V W °C °C –0.5 ~ +35 300 –0.5 ~ +35 1.47 1.00 0.80 0.78 –40 ~ +85 –55 ~ +125 Ratings Symbol Parameter Conditions Unit ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –40 ~ +85 °C) Output, H Current per circuit output, L Ta = 25 °C, when mounted on board M63803P M63803FP M63803GP M63803KP |
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