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M63817FP Datasheet(PDF) 1 Page - Mitsubishi Electric Semiconductor |
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M63817FP Datasheet(HTML) 1 Page - Mitsubishi Electric Semiconductor |
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1 / 5 page  Jan. 2000 PRELIMINARY Notice: This is not a final specification. Some parametric limits are subject to change. Unit: Ω The eight circuits share the COM and GND. The diode, indicated with the dotted line, is parasitic, and cannot be used. INPUT OUTPUT GND 10.5k 10k COM Package type 18P4G(P) 20P2N-A(FP) Package type 20P2E-A(KP) IN7→ 7 12 IN5→ 5 14 INPUT OUTPUT IN4→ 4 15 IN3→ 3 IN2→ 2 17 1 IN1 → 18 IN6→ 613 →O1 →O2 →O3 →O4 →O5 →O6 →O7 16 IN8→ 8 11 GND 9 →O8 10 →COM COMMOM IN7→ 8 13 IN5→ 6 15 INPUT OUTPUT IN4→ 5 16 IN3→ 4 IN2→ IN1→ IN6→ 7 14 3 18 →O1 →O2 →O3 →O4 →O5 →O6 →O7 17 IN8→ 9 12 GND 10 →O8 11 2 19 1 20 NC NC →COM COMMOM NC : No connection MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63817P/FP/KP 8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE PIN CONFIGURATION DESCRIPTION M63817P/FP/KP are eight-circuit Single transistor arrays with clamping diodes. The circuits are made of NPN transis- tors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. FEATURES q Three package configurations (P, FP, and KP) q Medium breakdown voltage (BVCEO ≥ 35V) q Synchronizing current (IC(max) = 300mA) q With clamping diodes q Low output saturation voltage q Wide operating temperature range (Ta = –40 to +85 °C) APPLICATION Driving of digit drives of indication elements (LEDs and lamps) with small signals FUNCTION The M63817P/FP/KP each have eight circuits consisting of NPN transistor. A spike-killer clamping diode is provided be- tween each output pin (collector) and COM pin. The transis- tor emitters are all connected to the GND pin. The transistors allow synchronous flow of 300mA collector current. A maxi- mum of 35V voltage can be applied between the collector and emitter. CIRCUIT DIAGRAM |
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