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M63828WP Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor |
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M63828WP Datasheet(HTML) 2 Page - Mitsubishi Electric Semiconductor |
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2 / 6 page  Feb. 2003 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63828WP/DP 7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –40 ~ +85 °C) V V V VO VIH VIL — — — 0 5 0 50 25 0.8 IC 0 0 — — 400 200 mA V V µA — ICEO = 100 µA II = 500 µA, IC = 350mA II = 350 µA, IC = 200mA II = 250 µA, IC = 100mA VI = 10V IF = 350mA VR = 50V VCE = 2V, IC = 350mA II VCE (sat) Symbol Unit Parameter Test conditions Limits min typ max 50 — — — — — — 1000 — 1.2 1.0 0.9 0.9 1.4 — 3000 — 1.6 1.3 1.1 1.5 2.0 100 — V mA ns ns — — 30 450 — — Symbol Unit Parameter Test conditions Limits min typ max TIMING DIAGRAM NOTE 1 TEST CIRCUIT PG 50 Ω CL Measured device OPEN VO RL INPUT OUTPUT (1) Pulse generator (PG) characteristics : PRR = 1kHz, tw = 10 µs, tr = 6ns, tf = 6ns, ZO = 50Ω VI = 8V (2) Input-output conditions : RL = 25 Ω, VO = 10V (3) Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes ton 50% 50% 50% 50% toff INPUT OUTPUT Limits min typ max Unit Parameter Symbol Duty Cycle WP : no more than 8% DP : no more than 5% Duty Cycle WP : no more thn 30% DP : no more than 20% “L” input voltage “H” input voltage Collector current (Current per 1 cir- cuit when 7 circuits are coming on si- multaneously) Output voltage IC ≤ 400mA Collector-emitter breakdown voltage Clamping diode forward voltage Clamping diode reverse current DC amplification factor V (BR) CEO VF IR hFE Collector-emitter saturation voltage Input current ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = 25 °C) SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25 °C) Turn-on time Turn-off time ton toff CL = 15pF (note 1) Taiwan A’ssy product |
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