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M63830P Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor |
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M63830P Datasheet(HTML) 2 Page - Mitsubishi Electric Semiconductor |
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2 / 4 page  Sep. 2001 PRELIMINARY Notice: This is not a final specification. Some parametric limits are subject to change. MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63830P/FP 4-UNIT 1.5A DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE — — RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –40 ~ +85 °C) V V Parameter 2.7 0 Limits min typ max Symbol Unit VCC VO Supply voltage Output voltage “H” input voltage “L” input voltage Collector current (Current per 1 circuit when 4 circuits are coming on simultaneously) IC 0 0 VCC-0.5 0 3.0 — — — 3.6 50 1.25 0.7 VCC VCC-2.2 A V V VIH VIL VCC = 3V, Duty Cycle P : no more than 5% FP : no more than 2% VCC = 3V, Duty Cycle P : no more than 15% FP : no more than 7% TIMING DIAGRAM NOTE 1 TEST CIRCUIT INPUT 50% 50% 50% 50% OUTPUT ton toff PG INPUT VCC OUTPUT VO RL OPEN CL 50 Ω (1)Pulse generator (PG) characteristics : PRR=1kHz, tw = 10 µs, tr = 6ns, tf = 6ns, Zo = 50Ω VI = 0.5 ~ 2.7V (2)Input-output conditions : RL = 8.3 Ω, Vo = 10V, Vcc = 2.7V (3)Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes Measured device ns ns — — 190 5300 — — Symbol Unit Parameter Test conditions Limits min typ max Turn-on time Turn-off time ton toff CL = 15pF (note 1) SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25 °C) — 3.7 1.4 1.0 –0.22 –0.60 — 1.5 30000 50 — — — — — — — 4000 V (BR) CEO ICC II IR VF hFE V mA V mA µA V — — 5.0 2.2 1.7 –0.6 –0.95 100 2.3 — Symbol Unit Parameter Test conditions Limits min typ max Collector-emitter breakdown voltage Supply current (AN only Input) Input current Clamping diode reverse current Clamping diode forward volltage DC amplification factor ICEO = 100 µA VCC = 3.6V, VI = 0.5V VCC = 2.7V, VI = 0.5V, IC = 1.25A VCC = 2.7V, VI = 0.5V, IC = 0.7A VI = VCC-2.2V VI = VCC-3.6V VR = 50V IF = 1.25A, VCC open VCC = 2.7V, VCE = 2V, IC = 1A, Ta = 25 °C VCE(sat) Collector-emitter saturation voltage ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = –40 ~ +85 °C) ✽ : Typical values are at Ta = 25°C ✽ |
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