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M63836FP Datasheet(PDF) 1 Page - Mitsubishi Electric Semiconductor |
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M63836FP Datasheet(HTML) 1 Page - Mitsubishi Electric Semiconductor |
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1 / 4 page  Sep. 2001 PRELIMINARY Notice: This is not a final specification. Some parametric limits are subject to change. PIN CONFIGURATION MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63836FP/KP 8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE DESCRIPTION The M63836FP/KP 8-channel sinkdriver, consists of 8 PNP and 16 NPN transistors connected to from eight high current gain driver pairs. FEATURES G High breakdown voltage (BVCEO ≥ 50V) G High-current driving (IC(max) = 500mA) G 3V micro computer compatible input G “L” active level input G With input diode G With clamping diodes G Wide operating temperature range (Ta = –40 to +85 °C) APPLICATION Output for 3 voltage microcomputer series and interface with high voltage system. Relay and small printer driver, LED, or incandescent display digit driver. FUNCTION The M63836FP/KP is transistor-array of high active level eight units type which can do direct drive of 3 voltage micro- computer series. A resistor of 3.5k Ω is connected between the input and the base of PNP transistors. A clamp diode for inductive load transient suppression is connected for the output pin (collector) and COM pin. The input diode is in- tended to prevent the flow of current from the input to the Vcc. without this diode, the current flows from “H” input to the Vcc and the “L” input circuit is activated, in such a case where one of the inputs of the 8 circuit is “H” and the other are “L” to save power consumption. The diode is inserted to prevent such mis-operation. The outputs are capable of driv- ing 500mA and are rated for operation with output voltage up to 50V. CIRCUIT DIAGRAM INPUT 3.5K 7.2K 3K 1.05K 20K VCC COM GND OUTPUT Unit : Ω The eight circuits share the Vcc, COM and GND The diode, indicated with the dotted line, is parasitic, and cannot be used. Supply voltage Collector-emitter voltage Collector current Input voltage Clamping diode forward current Clamping diode reverse voltage Power dissipation Operating temperature Storage temperature V V mA V mA V W °C °C 7 –0.5 ~ +50 500 –0.5 ~ VCC 500 50 1.10(FP)/0.68(KP) –40 ~ +85 –55 ~ +125 Ratings Symbol Parameter Conditions Unit ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –40 ~ +85 °C) Output, H Current per circuit output, L Ta = 25 °C, when mounted on board VCC VCEO IC VI IF VR Pd Topr Tstg 1 2 3 4 5 6 7 8 9 10 20 19 18 17 16 15 14 13 12 11 NC IN1 GND COM COMMON VCC INPUT OUTPUT O1 O2 O3 O4 O5 O6 O7 O8 IN2 IN3 IN4 IN5 IN6 IN7 IN8 NC : No connection Package type 20P2N-A(FP) 20P2E-A(KP) |
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