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IDT7164LS Datasheet(PDF) 6 Page - Integrated Device Technology

Part # IDT7164LS
Description  CMOS Static RAM 64K (8K x 8-Bit)
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Manufacturer  IDT [Integrated Device Technology]
Direct Link  http://www.idt.com
Logo IDT - Integrated Device Technology

IDT7164LS Datasheet(HTML) 6 Page - Integrated Device Technology

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IDT7164S/L
CMOS Static RAM 64K (8K x 8-Bit)
Military, Commercial, and Industrial Temperature Ranges
AC Electrical Characteristics (con't.) (VCC= 5.0V ± 10%, Military Temperature Ranges)
NOTES:
1. Both chip selects must be active for the device to be selected.
2. This parameter is guaranteed by device characterization, but is not production tested.
Symbol
Parameter
7164S45
7164L45
7164S55
7164L55
7164S70
7164L70
7164S85/100
7164L85/100
Unit
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
Read Cycle
tRC
Read Cycle Time
45
____
55
____
70
____
85/100
____
ns
tAA
Address Access Time
____
45
____
55
____
70
____
85/100
ns
tACS1(1)
Chip Select-1 Access Time
____
45
____
55
____
70
____
85/100
ns
tACS2(1)
Chip Select-2 Access Time
____
45
____
55
____
70
____
85/100
ns
tCLZ1,2(2)
Chip Select-1, 2 to Output in Low-Z
5
____
5
____
5
____
5
____
ns
tOE
Output Enable to Output Valid
____
25
____
30
____
35
____
40
ns
tOLZ(2)
Output Enab le to Output in Low-Z
0
____
0
____
0
____
0
____
ns
tCHZ1,2(2)
Chip Select-1,2 to Output in High-Z
____
20
____
25
____
30
____
35
ns
tOHZ(2)
Output Disab le to Output in High-Z
____
20
____
25
____
30
____
35
ns
tOH
Output Hold from Address Change
5
____
5
____
5
____
5
____
ns
tPU(2)
Chip Sele ct to Power Up Time
0
____
0
____
0
____
0
____
ns
tPD(2)
Chip Deselect to Power Down Time
____
45
____
55
____
70
____
85/100
ns
Write Cycle
tWC
Write Cycle Time
45
____
55
____
70
____
85/100
____
ns
tCW1,2
Chip Select to End-of-Write
33
____
50
____
60
____
75
____
ns
tAW
Address Valid to End-of-Write
33
____
50
____
60
____
75
____
ns
tAS
Address Set-up Time
0
____
0
____
0
____
0
____
ns
tWP
Write Pulse Width
25
____
50
____
60
____
75
____
ns
tWR1
Write Recovery Time (
CS1, WE)0
____
0
____
0
____
0
____
ns
tWR2
Write Recovery Time (CS2)5
____
5
____
5
____
5
____
ns
tWHZ(2)
Write Enab le to Output in High-Z
____
18
____
25
____
30
____
35
ns
tDW
Data to Write Time Overlap
20
____
25
____
30
____
35
____
ns
tDH1
Data Hold from Write Time (
CS1, WE)0
____
0
____
0
____
0
____
ns
tDH2
Data Hold from Write Time (CS2)5
____
5
____
5
____
5
____
ns
tOW(2)
Output Active from End-of-Write
4
____
4
____
4
____
4
____
ns
2967 tbl 13


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