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P3C125615JI Datasheet(PDF) 7 Page - Pyramid Semiconductor Corporation |
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P3C125615JI Datasheet(HTML) 7 Page - Pyramid Semiconductor Corporation |
7 / 10 page P3C1256 Page 7 of 10 Document # SRAM122 REV B DATA RETENTION CHARACTERISTICS Symbol V DR I CCDR t CDR t R † Parameter V CC for Data Retention Data Retention Current Chip Deselect to Data Retention Time Operation Recovery Time Test Conditons CE ≥ V CC –0.2V, V IN ≥ VCC –0.2V or V IN ≤ 0.2V Min 2.0 0 t RC § Typ.* V CC = 2.0V 3.0V Max V CC = 2.0V 3.0V Unit 10 15 600 900 V µA ns ns *T A = +25°C §t RC = Read Cycle Time † This parameter is guaranteed but not tested. DATA RETENTION WAVEFORM TSOP PIN CONFIGURATION |
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