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P4C163-35JM Datasheet(PDF) 2 Page - Pyramid Semiconductor Corporation |
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P4C163-35JM Datasheet(HTML) 2 Page - Pyramid Semiconductor Corporation |
2 / 12 page P4C163/163L Page 2 of 12 Document # SRAM120 REV C MAXIMUM RATINGS(1) Symbol Parameter Value Unit V CC Power Supply Pin with –0.5 to +7 V Respect to GND Terminal Voltage with –0.5 to V TERM Respect to GND V CC +0.5 V (up to 7.0V) T A Operating Temperature –55 to +125 °C Symbol Parameter Value Unit T BIAS Temperature Under –55 to +125 °C Bias T STG Storage Temperature –65 to +150 °C P T Power Dissipation 1.0 W I OUT DC Output Current 50 mA Ambient Temperature Commercial 0°C to +70°C 0V 5.0V ± 10% Grade(2) GND V CC Grade(2) GND V CC Ambient Temperature Military –55 to +125°C 0V 5.0V ± 10% RECOMMENDED OPERATING TEMPERATURE AND SUPPLY VOLTAGE Notes: 1. Stresses greater than those listed under MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to MAXIMUM rating conditions for extended periods may affect reliability. DC ELECTRICAL CHARACTERISTICS Over recommended operating temperature and supply voltage(2) P4C163 P4C163L Min Max Min Max V IH Input High Voltage 2.2 V CC+0.5 2.2 V CC+0.5 V V IL Input Low Voltage –0.5(3) 0.8 –0.5(3) 0.8 V V HC CMOS Input High Voltage V CC–0.2 V CC+0.5 V CC–0.2 V CC+0.5 V V LC CMOS Input Low Voltage –0.5(3) 0.2 –0.5(3) 0.2 V V CD Input Clamp Diode Voltage V CC = Min., IIN = –18 mA –1.2 –1.2 V V OL Output Low Voltage I OL = +8 mA, VCC = Min. 0.4 0.4 V (TTL Load) V OLC Output Low Voltage I OLC = +100 µA, VCC = Min. 0.2 0.2 V (CMOS Load) V OH Output High Voltage I OH = –4 mA, VCC = Min. 2.4 2.4 V (TTL Load) V OHC Output High Voltage I OHC = –100 µA, VCC = Min. V CC–0.2 V CC–0.2 V (CMOS Load) I LI Input Leakage Current V CC = Max. Mil. –10 +10 –5 +5 µA V IN = GND to VCC Com’l. –5 +5 N/A N/A I LO Output Leakage Current V CC = Max., CE = VIH, Mil. –10 +10 –5 +5 µA V OUT= GND to VCC Com’l. –5 +5 N/A N/A Symbol Parameter Test Conditions Unit Symbol Parameter Conditions Typ. Unit C IN Input Capacitance V IN = 0V 5 pF CAPACITANCES(4) (V CC = 5.0V, TA = 25°C, f = 1.0MHz) Symbol Parameter Conditions Typ. Unit C OUT Output Capacitance V OUT = 0V 7 pF 2. Extended temperature operation guaranteed with 400 linear feet per minute of air flow. 3. Transient inputs with V IL and IIL not more negative than –3.0V and –100mA, respectively, are permissible for pulse widths up to 20 ns. 4. This parameter is sampled and not 100% tested. |
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