P4C163-45FMLF datasheet(6/12 Pages) PYRAMID

Part #	P4C163-45FMLF

Description	ULTRA HIGH SPEED 8K x 9 STATIC CMOS RAMS

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Manufacturer	PYRAMID [Pyramid Semiconductor Corporation]

Direct Link	http://www.pyramidsemiconductor.com

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6 / 12 page

P4C163/163L

Page 6 of 12

Document # SRAM120 REV C

-25

-35

-45

Min Max Min Max Min Max

t

WC

Write Cycle Time

25

35

45

ns

t

CW

Chip Enable

18

25

33

ns

Time to End of Write

t

AW

Address Valid to

18

25

33

ns

End of Write

t

AS

Address Set-up Time

0

ns

t

WP

Write Pulse Width

18

20

25

ns

t

AH

Address Hold Time

0

ns

t

DW

Data Valid to End

13

15

20

ns

of Write

t

DH

Data Hold Time

0

ns

t

WZ

Write Enable to

10

14

18

ns

Output in High Z

t

OW

Output Active

3

5

ns

from End of Write

AC CHARACTERISTICS—WRITE CYCLE

(V

CC = 5V ± 10%, All Temperature Ranges)

(2)

Symbol

Parameter

Unit

WRITE CYCLE NO. 1 (WE

WE

WE CONTROLLED)(11)

Notes:

11. CE

1 and WE must be LOW, and CE2 HIGH for WRITE cycle.

12. OE is LOW for this WRITE cycle to show t

WZ and tOW.

13. If CE

1 goes HIGH, or CE2 goes LOW, simultaneously with WE

HIGH, the output remains in a low impedance state.

14. Write Cycle Time is measured from the last valid address to the first

transitioning address.

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P4C163-45FMLF Datasheet(PDF) 6 Page - Pyramid Semiconductor Corporation

P4C163-45FMLF Datasheet(HTML) 6 Page - Pyramid Semiconductor Corporation

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