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P4C164-35LCLF Datasheet(PDF) 3 Page - Pyramid Semiconductor Corporation |
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P4C164-35LCLF Datasheet(HTML) 3 Page - Pyramid Semiconductor Corporation |
3 / 16 page P4C164 Page 3 of 16 Document # SRAM115 REV F DATA RETENTION CHARACTERISTICS (P4C164L, Military Temperature Only) Typ.* Max Symbol Parameter Test Condition Min V CC=VCC= Unit 2.0V 3.0V 2.0V 3.0V V DR V CC for Data Retention 2.0 V I CCDR Data Retention Current 10 15 200 300 µA t CDR Chip Deselect to 0 ns Data Retention Time t R † Operation Recovery Time t RC § ns *T A = +25°C §t RC = Read Cycle Time †This parameter is guaranteed but not tested. *V CC = 5.5V. Tested with outputs open. f = Max. Switching inputs are 0V and 3V. CE 1 = VIL, CE2 = VIH, OE = VIH POWER DISSIPATION CHARACTERISTICS VS. SPEED DATA RETENTION WAVEFORM CE 1 ≥ VCC – 0.2V or CE 2 ≤ 0.2V, VIN ≥ VCC – 0.2V or V IN ≤ 0.2V Symbol Parameter Temperature Range -8 -10 -12 -15 -20 -25 -35 45 -70 -100 Unit Commercial 200 180 170 160 155 150 145 N/A 130 125 mA Industrial N/A 190 180 170 160 155 150 N/A 145 140 mA Military N/A N/A 180 170 160 155 150 145 145 145 mA Dynamic Operating Current* ICC |
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