Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.NET

X  

CY7C1021D Datasheet(PDF) 5 Page - Cypress Semiconductor

Part # CY7C1021D
Description  1-Mbit (64K x 16) Static RAM
Download  11 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY7C1021D Datasheet(HTML) 5 Page - Cypress Semiconductor

  CY7C1021D Datasheet HTML 1Page - Cypress Semiconductor CY7C1021D Datasheet HTML 2Page - Cypress Semiconductor CY7C1021D Datasheet HTML 3Page - Cypress Semiconductor CY7C1021D Datasheet HTML 4Page - Cypress Semiconductor CY7C1021D Datasheet HTML 5Page - Cypress Semiconductor CY7C1021D Datasheet HTML 6Page - Cypress Semiconductor CY7C1021D Datasheet HTML 7Page - Cypress Semiconductor CY7C1021D Datasheet HTML 8Page - Cypress Semiconductor CY7C1021D Datasheet HTML 9Page - Cypress Semiconductor Next Button
Zoom Inzoom in Zoom Outzoom out
 5 / 11 page
background image
CY7C1021D
Document #: 38-05462 Rev. *E
Page 5 of 11
Switching Characteristics (Over the Operating Range) [7]
Parameter
Description
–10 (Industrial)
–12 (Automotive)
Unit
Min
Max
Min
Max
Read Cycle
tpower [8]
VCC(typical) to the first access
100
100
µs
tRC
Read Cycle Time
10
12
ns
tAA
Address to Data Valid
10
12
ns
tOHA
Data Hold from Address Change
3
3
ns
tACE
CE LOW to Data Valid
10
12
ns
tDOE
OE LOW to Data Valid
5
6ns
tLZOE
OE LOW to Low Z [9]
0
0
ns
tHZOE
OE HIGH to High Z [9, 10]
5
6ns
tLZCE
CE LOW to Low Z [9]
3
3
ns
tHZCE
CE HIGH to High Z [9, 10]
5
6ns
tPU
CE LOW to Power-Up
0
0
ns
tPD
CE HIGH to Power-Down
10
12
ns
tDBE
Byte Enable to Data Valid
5
6ns
tLZBE
Byte Enable to Low Z
0
0
ns
tHZBE
Byte Disable to High Z
5
6ns
Write Cycle [12]
tWC
Write Cycle Time
10
12
ns
tSCE
CE LOW to Write End
7
10
ns
tAW
Address Set-Up to Write End
7
10
ns
tHA
Address Hold from Write End
0
0
ns
tSA
Address Set-Up to Write Start
0
0
ns
tPWE
WE Pulse Width
7
10
ns
tSD
Data Set-Up to Write End
6
7
ns
tHD
Data Hold from Write End
0
0
ns
tLZWE
WE HIGH to Low Z [9]
3
3
ns
tHZWE
WE LOW to High Z [9, 10]
5
6ns
tBW
Byte Enable to End of Write
7
10
ns
Notes
7. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5 V, input pulse levels of 0 to 3.0 V, and output loading of the specified
IOL/IOH and 30-pF load capacitance.
8. tPOWER gives the minimum amount of time that the power supply should be at typical VCC values until the first memory access can be performed.
9. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device.
10. tHZOE, tHZBE, tHZCE, and tHZWE are specified with a load capacitance of 5 pF as in (c) of “AC Test Loads and Waveforms [6]” on page 4. Transition is measured when
the outputs enter a high impedance state.
11. This parameter is guaranteed by design and is not tested.
12. The internal write time of the memory is defined by the overlap of CE LOW, WE LOW and BHE/BLE LOW. CE, WE and BHE/BLE must be LOW to initiate a write,
and the transition of these signals can terminate the write. The input data set-up and hold timing should be referenced to the leading edge of the signal that
terminates the write.
[+] Feedback
[+] Feedback


Similar Part No. - CY7C1021D

ManufacturerPart #DatasheetDescription
logo
Cypress Semiconductor
CY7C1021D CYPRESS-CY7C1021D Datasheet
510Kb / 16P
   1-Mbit (64 K 횞 16) Static RAM CMOS for Optimum Speed and Power
CY7C1021D-10VXI CYPRESS-CY7C1021D-10VXI Datasheet
510Kb / 16P
   1-Mbit (64 K 횞 16) Static RAM CMOS for Optimum Speed and Power
CY7C1021D-10VXIT CYPRESS-CY7C1021D-10VXIT Datasheet
521Kb / 16P
   1-Mbit (64 K 횞 16) Static RAM
CY7C1021D-10ZSXI CYPRESS-CY7C1021D-10ZSXI Datasheet
510Kb / 16P
   1-Mbit (64 K 횞 16) Static RAM CMOS for Optimum Speed and Power
CY7C1021DV33 CYPRESS-CY7C1021DV33 Datasheet
384Kb / 11P
   1-Mbit (64K x 16) Static RAM
More results

Similar Description - CY7C1021D

ManufacturerPart #DatasheetDescription
logo
Cypress Semiconductor
CY7C1021B CYPRESS-CY7C1021B Datasheet
370Kb / 10P
   1-Mbit (64K x 16) Static RAM
CY62126ESL CYPRESS-CY62126ESL Datasheet
419Kb / 12P
   1-Mbit (64K x 16) Static RAM
CY62126EV30 CYPRESS-CY62126EV30_10 Datasheet
299Kb / 16P
   1-Mbit (64K x 16) Static RAM
CY7C1021CV33 CYPRESS-CY7C1021CV33_08 Datasheet
394Kb / 14P
   1-Mbit (64K x 16) Static RAM
CY62126EV30 CYPRESS-CY62126EV30_09 Datasheet
472Kb / 13P
   1-Mbit (64K x 16) Static RAM
CY62126EV30 CYPRESS-CY62126EV30 Datasheet
612Kb / 12P
   1-Mbit (64K x 16) Static RAM
CY7C1021CV33 CYPRESS-CY7C1021CV33_06 Datasheet
390Kb / 13P
   1-Mbit (64K x 16) Static RAM
CY62126DV30 CYPRESS-CY62126DV30 Datasheet
398Kb / 11P
   1-Mbit (64K x 16) Static RAM
CY7C1021CV26 CYPRESS-CY7C1021CV26 Datasheet
247Kb / 9P
   1-Mbit (64K x 16) Static RAM
CY7C1021DV33 CYPRESS-CY7C1021DV33 Datasheet
384Kb / 11P
   1-Mbit (64K x 16) Static RAM
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.NET
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com