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P4C150-25PMB Datasheet(PDF) 5 Page - Pyramid Semiconductor Corporation

Part # P4C150-25PMB
Description  ULTRA HIGH SPEED 1K X 4 RESETTABLE STATIC CMOS RAM
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Manufacturer  PYRAMID [Pyramid Semiconductor Corporation]
Direct Link  http://www.pyramidsemiconductor.com
Logo PYRAMID - Pyramid Semiconductor Corporation

P4C150-25PMB Datasheet(HTML) 5 Page - Pyramid Semiconductor Corporation

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P4C150
Page 5 of 11
Document # SRAM105 REV A
TIMING WAVEFORM OF WRITE CYCLE NO. 1 (WE
WE
WE
WE
WE CONTROLLED)(10)
12. Write Cycle Time is measured from the last valid address to the first
transition address.
Notes:
10. CS and WE must be LOW for WRITE cycle.
11. If CS goes HIGH simultaneously with WE high, the output remains
in a high impedance state.
TIMING WAVEFORM OF WRITE CYCLE NO. 2 (CS
CS
CS
CS
CS CONTROLLED)(10)
Sym.
t
WC
t
CW
t
AW
t
AS
t
WP
t
AH
t
DW
t
DH
t
WZ
t
OW
Parameter
Chip Enable Time to End of Write
Address Valid to End of Write
Address Set-up Time
Write Pulse Width
Address Hold Time from
End of Write
Data Valid to End of Write
Data Hold Time
Write Enable to Output in High Z
Output Active from End of Write
-10
Min
10
8
8
0
8
0
5
0
2
Max
5
-12
Min
12
10
10
1
10
1
8
1
2
Max
8
-15
Min
15
11
13
1
11
1
11
1
2
Max
12
-20
Min
20
13
16
1
13
1
13
1
3
Max
15
-25
Min
25
15
20
2
15
2
15
2
3
Max
20
AC CHARACTERISTICS—WRITE CYCLE
(V
CC = 5V ± 10%, All Temperature Ranges)
(2)
-35
Min
35
20
25
2
20
2
20
2
3
Max
25
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Write Cycle Time


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