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IRG4RC10KPBF Datasheet(PDF) 2 Page - International Rectifier |
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IRG4RC10KPBF Datasheet(HTML) 2 Page - International Rectifier |
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2 / 10 page  IRG4RC10KPbF 2 www.irf.com Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) — 19 29 IC = 5.0A Qge Gate - Emitter Charge (turn-on) — 2.9 4.3 nC VCC = 400V See Fig.8 Qgc Gate - Collector Charge (turn-on) — 9.8 15 VGE = 15V td(on) Turn-On Delay Time — 11 — tr Rise Time — 24 — TJ = 25°C td(off) Turn-Off Delay Time — 51 77 IC = 5.0A, VCC = 480V tf Fall Time — 190 290 VGE = 15V, RG = 100Ω Eon Turn-On Switching Loss — 0.16 — Energy losses include "tail" Eoff Turn-Off Switching Loss — 0.10 — mJ See Fig. 9,10,14 Ets Total Switching Loss — 0.26 0.32 tsc Short Circuit Withstand Time 10 — — µs VCC = 400V, TJ = 125°C VGE = 15V, RG = 100Ω , VCPK < 500V td(on) Turn-On Delay Time — 11 — TJ = 150°C, tr Rise Time — 27 — IC = 5.0A, VCC = 480V td(off) Turn-Off Delay Time — 67 — VGE = 15V, RG = 100Ω tf Fall Time — 350 — Energy losses include "tail" Ets Total Switching Loss — 0.47 — mJ See Fig. 10,11,14 LE Internal Emitter Inductance — 7.5 — nH Measured 5mm from package Cies Input Capacitance — 220 — VGE = 0V Coes Output Capacitance — 29 — pF VCC = 30V See Fig. 7 Cres Reverse Transfer Capacitance — 7.5 — ƒ = 1.0MHz Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 250µA V(BR)ECS Emitter-to-Collector Breakdown Voltage 18 — — V VGE = 0V, IC = 1.0A ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.58 — V/°C VGE = 0V, IC = 1.0mA — 2.39 2.62 IC = 5.0A VGE = 15V VCE(ON) Collector-to-Emitter Saturation Voltage — 3.25 — IC = 9.0A See Fig.2, 5 — 2.63 — IC = 5.0A , TJ = 150°C VGE(th) Gate Threshold Voltage 3.0 — 6.5 VCE = VGE, IC = 250µA ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage — -11 — mV/°C VCE = VGE, IC = 250µA gfe Forward Transconductance 1.2 1.8 — S VCE = 50 V, IC = 5.0A — — 250 VGE = 0V, VCE = 600V — — 2.0 VGE = 0V, VCE = 10V, TJ = 25°C — — 1000 VGE = 0V, VCE = 600V, TJ = 150°C IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V Electrical Characteristics @ TJ = 25°C (unless otherwise specified) ICES Zero Gate Voltage Collector Current V µA Switching Characteristics @ TJ = 25°C (unless otherwise specified) ns ns Repetitive rating; pulse width limited by maximum junction temperature. Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot. Notes: Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 100Ω, (See fig. 13a) |
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