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P4C164L-100SCLF Datasheet(PDF) 4 Page - Pyramid Semiconductor Corporation |
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P4C164L-100SCLF Datasheet(HTML) 4 Page - Pyramid Semiconductor Corporation |
4 / 11 page P4C164L Page 4 of 11 Document # SRAM116 REV B READ CYCLE NO. 1 ( OE OE OE OE OE CONTROLLED)(1) NOTES: READ CYCLE NO. 2 (ADDRESS CONTROLLED) READ CYCLE NO. 3 ( CE CE CE CE CE 1,CE2 CONTROLLED) Notes: 5. WE is HIGH for READ cycle. 6. CE 1 is LOW, CE2 is HIGH and OE is LOW for READ cycle. 7. ADDRESS must be valid prior to, or coincident with CE 1 transition LOW and CE 2 transition HIGH. 8. Transition is measured ± 200 mV from steady state voltage prior to change, with loading as specified in Figure 1. This parameter is sampled and not 100% tested. 9. READ Cycle Time is measured from the last valid address to the first transitioning address. 10. Transitions caused by a chip enable control have similar delays irrespective of whether CE 1 or CE2 causes them. |
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