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P4C165-15PC Datasheet(PDF) 3 Page - Pyramid Semiconductor Corporation |
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P4C165-15PC Datasheet(HTML) 3 Page - Pyramid Semiconductor Corporation |
3 / 9 page 3 P4C165 Page 3 of 9 Document # SRAM117 Rev OR I CC Symbol Parameter Temperature Range Dynamic Operating Current* Commercial Industrial –15 –20 –25 –35 Unit mA mA *V CC = 5.5V. Tested with outputs open. f = Max. Switching inputs are 0V and 3V. CE1 = VIL, CE2 = VIH, OE = VIH POWER DISSIPATION CHARACTERISTICS VS. SPEED 150 155 160 160 155 150 N/A N/A AC ELECTRICAL CHARACTERISTICS—READ CYCLE (V CC = 5V ± 10%, All Temperature Ranges) (2) Sym. t RC t AA t AC t OH t LZ t HZ t OE t OLZ t OHZ t PU t PD Parameter Read Cycle Time Address Access Time Chip Enable Access Time Output Hold from Address Change Chip Enable to Output in Low Z Chip Disable to Output in High Z Output Enable Low to Low Z Output Enable High to High Z Chip Enable to Power Up Time Chip Disable to Power Down Time Output Enable Low to Data Valid Max Min Max Min Max Min Max Min -15 -20 -25 -35 Unit 15 3 2 2 0 15 15 8 9 9 15 20 3 2 2 0 20 20 8 10 9 20 25 3 2 2 0 25 25 10 13 12 20 35 3 2 2 0 35 35 15 18 15 20 ns ns ns ns ns ns ns ns ns ns ns |
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