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PM50RLB060 Datasheet(PDF) 3 Page - Mitsubishi Electric Semiconductor |
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PM50RLB060 Datasheet(HTML) 3 Page - Mitsubishi Electric Semiconductor |
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3 / 9 page  MITSUBISHI <INTELLIGENT POWER MODULES> PM50RLB060 FLAT-BASE TYPE INSULATED PACKAGE May 2005 Parameter Symbol Supply Voltage Protected by SC Supply Voltage (Surge) Storage Temperature Isolation Voltage Condition VCC(surge) Tstg Viso Ratings VCC(PROT) 400 500 –40 ~ +125 2500 Unit V °C Vrms V VD = 13.5 ~ 16.5V, Inverter Part, Tj = +125 °C Start Applied between : P-N, Surge value 60Hz, Sinusoidal, Charged part to Base, AC 1 min. 2.1 2.0 3.3 2.4 0.4 1.0 2.5 1.0 1 10 Min. Typ. Max. Collector-Emitter Saturation Voltage Collector-Emitter Cutoff Current –IC = 50A, VD = 15V, VCIN = 15V (Fig. 2) Tj = 25 °C Tj = 125 °C ELECTRICAL CHARACTERISTICS (Tj = 25 °C, unless otherwise noted) INVERTER PART Parameter Symbol Condition VCE(sat) ICES VEC ton trr tc(on) toff tc(off) Limits — — — 0.5 — — — — — — 1.6 1.5 2.2 1.0 0.2 0.4 1.2 0.5 — — Tj = 25 °C Tj = 125 °C FWDi Forward Voltage Switching Time VD = 15V, VCIN = 0V ↔15V VCC = 300V, IC = 50A Tj = 125 °C Inductive Load (Fig. 3,4) VCE = VCES, VCIN = 15V (Fig. 5) VD = 15V, IC = 50A VCIN = 0V (Fig. 1) TOTAL SYSTEM V mA V µs Unit UP IGBT 29.0 –7.3 VP WP UN VN WN Br FWDi 29.5 1.6 IGBT 64.6 –7.3 FWDi 65.1 2.1 IGBT 85.9 –7.3 FWDi 86.4 2.1 IGBT 38.1 5.3 FWDi 37.6 –4.6 IGBT 54.8 5.3 FWDi 55.3 –4.6 IGBT 76.1 5.3 FWDi 75.6 –4.6 IGBT 18.3 –7.4 FWDi 22.4 7.0 arm axis X Y Bottom view * If you use this value, Rth(f-a) should be measured just under the chips. (Note-1) Tc (under the chip) measurement point is below. (unit : mm) 0.95* 1.61* 1.21* 2.19* 0.038 °C/W Rth(j-c)Q Rth(j-c)F Rth(j-c)Q Rth(j-c)F Rth(c-f) Inverter IGBT (per 1 element) (Note-1) Inverter FWDi (per 1 element) (Note-1) Brake IGBT (Note-1) Brake FWDi (Note-1) Case to fin, (per 1 module) Thermal grease applied (Note-1) Symbol Condition Unit Min. — — — — — — — — — — Junction to case Thermal Resistances THERMAL RESISTANCES Contact Thermal Resistance Parameter Limits Typ. Max. |
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