FW905

No.8754-1/6

Features

•

Composite type with an N-channel MOSFET and a P-channel MOSFET driving from a 2.5V supply voltage

contained in a single package.

•

High-density mounting.

Specifications

Absolute Maximum Ratings at Ta=25

°C

Parameter

Symbol

Conditions

N-channel

P-channel

Unit

Drain-to-Source Voltage

VDSS

20

--20

V

Gate-to-Source Voltage

VGSS

±10

±10

V

Drain Current (DC)

ID

7

--6

A

Drain Current (PW

≤10µs)

IDP

Duty cycle

≤1%

52

--52

A

Allowable Power Dissipation

PD

Mounted on a ceramic board

2.3

W

≤10s

Total Dissipation

PT

Mounted on a ceramic board

2.5

W

≤10s

Channel Temperature

Tch

150

°C

Storage Temperature

Tstg

--55 to +150

°C

Electrical Characteristics at Ta=25

°C

Ratings

Parameter

Symbol

Conditions

min

typ

max

Unit

[N-channel]

Drain-to-Source Breakdown Voltage

V(BR)DSS

ID=1mA, VGS=0V

20

V

Zero-Gate Voltage Drain Current

IDSS

VDS=20V, VGS=0V

1

µA

Gate-to-Source Leakage Current

IGSS

VGS=±8V, VDS=0V

±10

µA

Cutoff Voltage

VGS(off)

VDS=10V, ID=1mA

0.5

1.3

V

Forward Transfer Admittance

yfs

VDS=10V, ID=7A

9

15

S

RDS(on)1

ID=7A, VGS=4V

18

24

m

Ω

Static Drain-to-Source On-State Resistance

RDS(on)2

ID=3A, VGS=2.5V

20

33

m

Ω

Input Capacitance

Ciss

VDS=10V, f=1MHz

1530

pF

Output Capacitance

Coss

VDS=10V, f=1MHz

230

pF

Reverse Transfer Capacitance

Crss

VDS=10V, f=1MHz

215

pF

Marking : W905

Continued on next page.

Ordering number : EN8754

80906 / 22406PA MS IM TB-00002087

FW905

N-Channel and P-Channel Silicon MOSFETs

General-Purpose Switching Device

Applications

SANYO Semiconductors

DATA SHEET

Any and all SANYO Semiconductor products described or contained herein do not have specifications

that can handle applications that require extremely high levels of reliability, such as life-support systems,

aircraft's control systems, or other applications whose failure can be reasonably expected to result in

serious physical and/or material damage. Consult with your SANYO Semiconductor representative

nearest you before usingany SANYO Semiconductor products described or contained herein in such

applications.

SANYO Semiconductor assumes no responsibility for equipment failures that result from using products

at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition

ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor

products described or contained herein.

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN