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STB140NF55-1 Datasheet(PDF) 3 Page - STMicroelectronics |
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STB140NF55-1 Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 15 page STB140NF55 - STB140NF55-1 - STP140NF55 Electrical ratings 3/15 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 55 V VGS Gate- source voltage ±20 V ID (1) 1. Current limited by package Drain current (continuous) at TC = 25°C 80 A ID (1) Drain current (continuous) at TC = 100°C 80 A IDM (2) 2. Pulse width limited by safe operating area Drain current (pulsed) 320 A PTOT Total dissipation at TC = 25°C 300 W Derating factor 2 W/°C dv/dt (3) 3. ISD < 80A, di/dt < 300A/µs, VDD=80%V(BR)DSS Peak diode recovery voltage slope 10 V/ns EAS (4) 4. Starting Tj = 25°C, ID = 40A, VDD = 30V Single pulse avalance energy 1.3 J Tstg Storage temperature –55 to 175 °C Tj Operating junction temperature Table 2. Thermal data Symbol Parameter Value Unit TO-220 - I²PAK D²PAK Rthj-case Thermal resistance junction-case max 0.5 °C/W Rthj-amb Thermal resistance junction-ambient max 62.5 -- °C/W Rthj-pcb (1) 1. When mounted on 1 inch², FR4 board, 2 oz Cu Thermal resistance junction-pcb max -- 35 °C/W Tl Maximum lead temperature for soldering purpose (for 10 sec, 1.6mm from case) 300 °C |
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