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PM100RSD060 Datasheet(PDF) 1 Page - Mitsubishi Electric Semiconductor

Part # PM100RSD060
Description  INTELLIGENT POWER MODULES FLAT-BASE TYPE INSULATED PACKAGE
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

PM100RSD060 Datasheet(HTML) 1 Page - Mitsubishi Electric Semiconductor

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MITSUBISHI <INTELLIGENT POWER MODULES>
PM100RSD060
FLAT-BASE TYPE
INSULATED PACKAGE
Jul. 2005
MITSUBISHI <INTELLIGENT POWER MODULES>
PM100RSD060
FLAT-BASE TYPE
INSULATED PACKAGE
PM100RSD060
FEATURE
a) Adopting new 4th generation planar IGBT chip, which per-
formance is improved by 1
µm fine rule process.
For example, typical VCE(sat)=1.7V
b) Using new Diode which is designed to get soft reverse
recovery characteristics.
c) Keeping the package compatibility.
The layout/position of both terminal pin and mounting hole
is same as S-series 3rd generation IPM.
•3
φ 100A, 600V Current-sense IGBT for 15kHz switching
• 30A, 600V Current-sense regenerative brake IGBT
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for over-
current, short-circuit, over-temperature & under-voltage
(P-Fo available from upper leg devices)
• Acoustic noise-less 11kW class inverter application
• UL Recognized
Yellow Card No.E80276(N)
File No.E80271
APPLICATION
General purpose inverter, servo drives and other motor controls
PACKAGE OUTLINES
Dimensions in mm
19
18
17
16
15
14
13
12
11
9
10
78
6
5
4
3
2
1
WV
U
A
MOUNTING HOLES
12
19-
0.5
2-
φ2.54
110±1
95±0.5
24.5
0.5±0.3
3.22
66.44
26
26
17.02
10
10
3-2
4-R6
6-M5NUTS
4-
φ5.5
6-2
3-2
3-2
10
LABEL
3.22
3-2
φ2.54
22
21.2
–0.5
+1.0
0.5
Terminal code
1. VUPC
2. UFO
3. UP
4. VUP1
5. VVPC
6. VFO
7. VP
8. VVP1
9. VWPC
10. WFO
11. WP
12. VWP1
13. VNC
14. VN1
15. Br
16. UN
17. VN
18. WN
19. Fo
A : DETAIL
Screwing depth
Min9.0


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