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PM200DSA120 Datasheet(PDF) 5 Page - Mitsubishi Electric Semiconductor |
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PM200DSA120 Datasheet(HTML) 5 Page - Mitsubishi Electric Semiconductor |
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5 / 6 page  Sep.2000 MITSUBISHI INTELLIGENT POWER MODULES PM200DSA120 FLAT-BASE TYPE INSULATED PACKAGE 12 14 0 SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) SUPPLY VOLTAGE, VD, (VOLTS) 16 20 22 1 2 4 3 5 6 18 IC = 200A VCIN = 0V Tj = 25 oC Tj = 125 oC 0 080 0 1 2 3 4 5 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT, IC, (AMPERES) 240 320 160 VD = 15V VCIN = 0V Tj = 25 oC Tj = 125 oC 01 2 0 OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER VOLTAGE, VCE(sat), (VOLTS) 35 120 200 280 360 4 13 VD = 17V Tj = 25 oC VCIN = 0V 15 COLLECTOR CURRENT, IC, (AMPERES) SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) ton 101 102 103 10-1 100 101 toff VCC = 600V VD = 15V Inductive Load Tj = 25 oC Tj = 125 oC COLLECTOR CURRENT, IC, (AMPERES) SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) 101 102 103 10-1 100 101 tc(off) tc(on) VCC = 600V VD = 15V Inductive Load Tj = 25 oC Tj = 125 oC COLLECTOR REVERSE CURRENT, IE, (AMPERES) REVERSE RECOVERY CURRENT VS. COLLECTOR CURRENT (TYPICAL) 101 102 103 10-2 10-1 100 101 102 103 VCC = 600V VD = 15V Inductive Load Tj = 25 oC Tj = 125 oC trr Irr 00 100 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) Tj = 25 oC Tj = 125 oC VD = 15V VCIN = 5V 0.5 1.0 1.5 2.0 2.5 3.0 101 102 103 DIODE FORWARD CHARACTERISTICS 40 60 80 100 120 OVER CURRENT TRIP LEVEL VS. SUPPLY VOLTAGE (TYPICAL) SUPPLY VOLTAGE, VD, (VOLTS) 13 15 17 19 21 TC = 25 oC 0 60 80 100 120 140 OVER CURRENT TRIP LEVEL VS. TEMPERATURE (TYPICAL) JUNCTION TEMPERATURE, TC, ( oC) 0 40 80 120 160 VD = 15V 0 |
Similar Part No. - PM200DSA120_00 |
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Similar Description - PM200DSA120_00 |
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