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PS11035 Datasheet(PDF) 3 Page - Mitsubishi Electric Semiconductor |
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PS11035 Datasheet(HTML) 3 Page - Mitsubishi Electric Semiconductor |
3 / 5 page MITSUBISHI SEMICONDUCTOR <Application Specific Intelligent Power Module> PS11035 FLAT-BASE TYPE INSULATED TYPE Jan. 2000 Condition Symbol Item Ratings Unit (Note 2) — (Fig. 3) 60 Hz sinusoidal AC applied between all terminals and the base plate for 1 minute. Mounting screw: M4 Tj Tstg TC VISO — Junction temperature Storage temperature Module case operating temperature Isolation voltage Mounting torque –20 ~ +125 –40 ~ +125 –20 ~ +100 2500 0.98 ~ 1.47 °C °C °C Vrms N·m TOTAL SYSTEM (Note 2) : The indicated values are specified considering the safe operation of all the parts within the ASIPM. The max. ratings for the ASIPM power chips (IGBT & FWDi) is Tj < 150. Condition Symbol Item Ratings Inverter IGBT (1/6) Inverter FWDi (1/6) Converter Di (1/6) Case to fin thermal, grease applied (1 Module) Rth(jc)Q Rth(jc)F Rth(jc)FR Rth(cf) Junction to case Thermal Resistance Contact Thermal Resistance Min. °C/W °C/W °C/W °C/W THERMAL RESISTANCE Typ. Max. — — — — — — — — 2.3 3.1 4.8 0.074 Unit Short circuit endurance (Output, Arm, and Load Short Circuit Modes) Switching SOA Tj = 25°C, Input = ON, Ic = 20A, VD = VDB = 15V (Shunt voltage drop not included) Tj = 25°C, –IC = 20A Tj = 25°C, IFR = 10A VR = VRRM, Tj = 125°C 1/2 Bridge inductive, Input = 5V ↔ 0V VCC = 300V, IC = 20A, Tj = 125°C VD = 15V, VDB = 15V Note: ton, toff include delay time of the internal control circuit. Condition Symbol Item Ratings Min. V V V mA µs µs µs µs µs Typ. Max. — — — — 0.3 — — — — — — — — 0.6 0.5 1.6 0.5 0.12 2.9 2.9 1.5 8 1.5 1.0 2.5 1.3 — Unit @VCC ≤ 400V, Input = 5V → 0V (One-Shot) –20°C ≤ Tj (start) ≤ 125°C, 13.5V ≤ VD = VDB ≤ 16.5V @VCC ≤ 400V, Input = 5V ↔ 0V, Tj ≤ 125°C IC < OC trip level, 13.5V ≤ VD = VDB ≤ 16.5V • No destruction • FO output by protection operation • No destruction • No protecting operation • No FO output ELECTRICAL CHARACTERISTICS (Tj = 25°C, VD = 15V, VDB = 15V unless otherwise noted) Collector-emitter saturation voltage FWDi forward voltage Converter diode voltage Converter diode reverse current Switching times FWDi reverse recovery time VCE(sat) VEC VFR IRRM ton tc(on) toff tc(off) trr (Fig. 3) TC CASE TEMPERATURE MEASUREMENT POINT |
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