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BDW64A Datasheet(PDF) 1 Page - Power Innovations Ltd |
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BDW64A Datasheet(HTML) 1 Page - Power Innovations Ltd |
1 / 6 page BDW64, BDW64A, BDW64B, BDW64C, BDW64D PNP SILICON POWER DARLINGTONS PRODUCT INFORMATION 1 AUGUST 1978 - REVISED MARCH 1997 Copyright © 1997, Power Innovations Limited, UK Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. q Designed for Complementary Use with BDW63, BDW63A, BDW63B, BDW63C and BDW63D q 60 W at 25°C Case Temperature q 6 A Continuous Collector Current q Minimum hFE of 750 at 3 V, 2 A B C E TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. MDTRACA 1 2 3 absolute maximum ratings at 25°C case temperature (unless otherwise noted) NOTES: 1. These values apply when the base-emitter diode is open circuited. 2. Derate linearly to 150°C case temperature at the rate of 0.48 W/°C. 3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. 4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -5 mA, RBE = 100 Ω, VBE(off) = 0, RS = 0.1 Ω, VCC = -20 V. RATING SYMBOL VALUE UNIT Collector-base voltage (IE = 0) BDW64 BDW64A BDW64B BDW64C BDW64D VCBO -45 -60 -80 -100 -120 V Collector-emitter voltage (IB = 0) (see Note 1) BDW64 BDW64A BDW64B BDW64C BDW64D VCEO -45 -60 -80 -100 -120 V Emitter-base voltage VEBO -5 V Continuous collector current IC -6 A Continuous base current IB -0.1 A Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 60 W Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Ptot 2 W Unclamped inductive load energy (see Note 4) ½LIC 2 50 mJ Operating junction temperature range Tj -65 to +150 °C Operating temperature range Tstg -65 to +150 °C Operating free-air temperature range TA -65 to +150 °C |
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