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BULD25DR Datasheet(PDF) 2 Page - Power Innovations Ltd |
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BULD25DR Datasheet(HTML) 2 Page - Power Innovations Ltd |
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2 / 12 page  BULD25D, BULD25DR, BULD25SL NPN SILICON TRANSISTOR WITH INTEGRATED DIODE 2 JULY 1994 - REVISED SEPTEMBER 1997 PRODUCT INFORMATION NOTES: 1. This value applies for tp = 1 s. 2. This value applies for tp = 10 ms, duty cycle ≤ 2%. NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts, and located within 1 mm from the device body for the D package and 3.2 mm from the device body for the SL package. NOTE 5: Refer to Figures 12, 13 and 14 for Functional Test Circuit and Switching Waveforms. Continuous collector current (see Note 1) IC 2 A Peak collector current (see Note 2) ICM 4 A Continuous base current (see Note 1) IB 1.5 A Peak base current (see Note 2) IBM 2.5 A Continuous device dissipation at (or below) 25°C ambient temperature BULD25D BULD25SL Ptot see Figure 10 see Figure 11 W Maximum average continuous diode forward current at (or below) 25°C ambient temperature IE(av) 0.5 A Operating junction temperature range Tj -65 to +150 °C Storage temperature range Tstg -65 to +150 °C electrical characteristics at 25°C ambient temperature PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VCEO(sus) Collector-emitter sustaining voltage IC = 0.1 A 400 V ICES Collector-emitter cut-off current VCE = 600 V VBE = 0 10 µA IEBO Emitter cut-off current VEB = 9 V IC = 0 1 mA VBE(sat) Base-emitter saturation voltage IB = 0.1 A IC = 0.5 A (see Notes 3 and 4) 0.9 1.1 V VCE(sat) Collector-emitter saturation voltage IB = 0.1 A IB = 0.2 A IC = 0.5 A IC = 1 A (see Notes 3 and 4) 0.3 0.6 0.5 1 V hFE Forward current transfer ratio VCE = 10 V VCE = 1.5 V VCE = 5 V IC = 0.01 A IC = 0.5 A IC = 1 A (see Notes 3 and 4) 10 10 10 18 15 15 20 20 VEC Anti-parallel diode forward voltage IE = 1 A (see Notes 3 and 4) 1.5 1.7 V thermal characteristics PARAMETER MIN TYP MAX UNIT RθJA Junction to free air thermal resistance D package SL Package 165 115 °C/W switching characteristics at 25°C ambient temperature PARAMETER TEST CONDITIONS MIN TYP MAX UNIT trr Anti-parallel diode reverse recovery time Measured by holding transistor in an off condition, VEB = -3 V (see Note 5) 0.5 1 µs ts Storage time (see Note 5) 2 3.5 5 µs tf Fall time (see Note 5) 0.25 0.35 µs absolute maximum ratings at 25°C ambient temperature (unless otherwise noted) (continued) RATING SYMBOL VALUE UNIT |
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