7

DECEMBER 1995 - REVISED SEPTEMBER 1997

R3612

PROGRAMMABLE OVERVOLTAGE PROTECTOR

FOR ERICSSON COMPONENTS 3357/3 DCLIC

PRODUCT

INFORMATION

The current through the device in the on-state condition.

The current through the device in the forward conducting state.

thermal characteristics

Temperature Derating

Derating with temperature above a specified base temperature, expressed as a percentage, such as may be

applied to peak pulse current.

The effective temperature rise per unit power dissipation of a designated junction, above the temperature of a

stated external reference point (lead, case, or ambient) under conditions of thermal equilibrium.

The change in the difference between the virtual junction temperature and the temperature of a specified

reference point or region (lead, case, or ambient) at the end of a time interval divided by the step function

change in power dissipation at the beginning of the same time interval which causes the change of

temperature-difference.

NOTE - It is the thermal impedance of the junction under conditions of change and is generally given in the

form of a curve as a function of the duration of an applied pulse.

A theoretical temperature representing the temperature of the junction(s) calculated on the basis of a

simplified model of the thermal and electrical behaviour of the device.

The maximum value of permissible junction temperature, due to self heating, which a TSS can withstand

without degradation.

gate terminal parameters

The lowest gate current required to switch a device from the off state to the on state.

The maximum gate to cathode voltage for a p-gate device or gate to anode voltage for an n-gate device that

terminal for a p-gate device or anode terminal for an n-gate device is open circuited.