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TIC256M Datasheet(PDF) 1 Page - Power Innovations Ltd |
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TIC256M Datasheet(HTML) 1 Page - Power Innovations Ltd |
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1 / 5 page  TIC256 SERIES SILICON TRIACS PRODUCT INFORMATION 1 JULY 1991 - REVISED MARCH 1997 Copyright © 1997, Power Innovations Limited, UK Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. q High Current Triacs q 20 A RMS q Glass Passivated Wafer q 400 V to 800 V Off-State Voltage q 150 A Peak Current q Max IGT of 50 mA (Quadrants 1 - 3) MT1 MT2 G TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. MDC2ACA 1 2 3 absolute maximum ratings over operating case temperature (unless otherwise noted) NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1. 2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 60°C derate linearly to 110°C case temperature at the rate of 500 mA/°C. 3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. RATING SYMBOL VALUE UNIT Repetitive peak off-state voltage (see Note 1) TIC256D TIC256M TIC256S TIC256N VDRM 400 600 700 800 V Full-cycle RMS on-state current at (or below) 60°C case temperature (see Note 2) IT(RMS) 20 A Peak on-state surge current full-sine-wave (see Note 3) ITSM 150 A Peak gate current IGM ±1 A Operating case temperature range TC -40 to +110 °C Storage temperature range Tstg -40 to +125 °C Lead temperature 1.6 mm from case for 10 seconds TL 230 °C electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT IDRM Repetitive peak off-state current VD = Rated VDRM IG = 0 TC = 110°C ±2 mA IGTM Peak gate trigger current Vsupply = +12 V† Vsupply = +12 V† Vsupply = -12 V† Vsupply = -12 V† RL = 10 Ω RL = 10 Ω RL = 10 Ω RL = 10 Ω tp(g) > 20 µs tp(g) > 20 µs tp(g) > 20 µs tp(g) > 20 µs 7 -15 -16 28 50 -50 -50 mA VGTM Peak gate trigger voltage Vsupply = +12 V† Vsupply = +12 V† Vsupply = -12 V† Vsupply = -12 V† RL = 10 Ω RL = 10 Ω RL = 10 Ω RL = 10 Ω tp(g) > 20 µs tp(g) > 20 µs tp(g) > 20 µs tp(g) > 20 µs 0.7 -0.7 -0.8 0.8 2 -2 -2 2 V VTM Peak on-state voltage ITM = ±28.2 A IG = 50 mA (see Note 4) ±1.4 ±1.7 V IH Holding current Vsupply = +12 V† Vsupply = -12 V† IG = 0 IG = 0 Init’ ITM = 100 mA Init’ ITM = -100 mA 6 -13 40 -40 mA † All voltages are with respect to Main Terminal 1. NOTE 4: This parameter must be measured using pulse techniques, tp = ≤ 1 ms, duty cycle ≤ 2 %. Voltage-sensing contacts separate from the current carrying contacts are located within 3.2 mm from the device body. |
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